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| Categories | SiC Substrate |
|---|---|
| Brand Name: | tankblue |
| Model Number: | 4h-n |
| Certification: | CE |
| Place of Origin: | CHINA |
| MOQ: | 3PCS |
| Price: | by size and grade |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 1000pc/month |
| Delivery Time: | 1-4weeks |
| Packaging Details: | single wafer container box or 25pc cassette box |
| Materials: | SIC crystal |
| type: | 4h-n |
| purity: | 99.9995% |
| resistivity: | 0.015~0.028ohm.cm |
| size: | 2-8inch 2inch, 3inch ,4inch ,6inch ,8inch |
| thickness: | 350um or customized |
| MPD: | 《2cm-2 |
| Application: | for SBD, MOS Device |
| TTV: | 《15um |
| bow: | 《25um |
| warp: | 《45um |
| Surface: | Si-face CMP, c-face MP |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
4inch 6inch 8inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device, 8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices
SiC feature
SiC (Silicon Carbide) is a compound material consists of silicon
(Si) and carbon (C), that has high hardness and heat resistance,
and it’s chemically stable.
As it has a wide bandgap, the application to the semiconductor
material is getting promoted.
With the high accuracy and high rigid grinding system of our edge grinder, smooth finish can be achieved even with SiC wafer that is difficult to cut material.
Comparison of third-generation semiconductor materials
SiC crystal is a third-generation semiconductor material, which has great advantages in low-power, miniaturization, high-voltage and high-frequency application scenarios. The third-generation semiconductor materials are represented by silicon carbide and gallium nitride. Compared with the previous two generations of semiconductor materials, the biggest advantage is its wide band-free width, which ensures that it can penetrate higher electric field strength and is suitable for preparing high-voltage and high-frequency power devices.
Classification
Silicon carbide SiC substrates can be divided into two categories: semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon carbide substrates with high resistivity (resistorivity ≥107Ω·cm), and conductive silicon carbide substrates with low resistivity (the resistivity range is 15-30mΩ·cm).
Application
Specification for 8inch 4H-N sic wafers .(2inch,3inch 4inch ,8inch sic wafer also is avaiable)
Industrial chain
The silicon carbide SiC industrial chain is divided into substrate material preparation, epitaxial layer growth, device manufacturing and downstream applications. Silicon carbide monocrystals are usually prepared by physical vapor transmission (PVT method), and then epitaxial sheets are generated by chemical vapor deposition (CVD method) on the substrate, and the relevant devices are finally made. In the industrial chain of SiC devices, due to the difficulty of substrate manufacturing technology, the value of the industrial chain is mainly concentrated in the upstream substrate link.
Related products
Why choose ZMSH company
ZMSH Technology can provide customers with imported and domestic high-quality conductive, 2-6inch semi-insulating and HPSI (High Purity Semi-insulating) SiC substrates in batches; In addition, it can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets, and can also be customized according to the specific needs of customers, with no minimum order quantity.
Contact us
Monica Liu
Tel: +86-198-2279- 1220(whatsapp or skype is available )
Email:monica@zmsh-materials.com
Company: SHANGHAI FAMOUS TRADE CO.,LTD.
Factory: WUXI JINGJING TECHNOLOGY CO.,LTD.
Address: Room.5-616,No.851 Dianshanhu Road,Qingpu Area
Shanghai city, China /201799
We are focus on semiconductor
crystal(GaN;SiC;Sapphire;GaAs;InP;Silicon;MgO,LT/LN; etc.)
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4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch 12inch Prime Grade Dummy Grade
High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate
Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2
2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector
2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device
dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped transparent sic Wafer
Customized Size Square Sic Chip Low Lattice Mismatch With High Thermal
3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
Semi - Insulating Silicon Carbide Substrate , Sic Wafer 4H High Purity
4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material
