| Sign In | Join Free | My frbiz.com |
|
| Sign In | Join Free | My frbiz.com |
|
| Categories | SiC Substrate |
|---|---|
| Brand Name: | zmsh |
| Model Number: | transparent colorless |
| Certification: | ISO9001 |
| Place of Origin: | china |
| MOQ: | 10PCS |
| Price: | by case |
| Payment Terms: | T/T, T/T |
| Delivery Time: | 30days within |
| Packaging Details: | by customized case |
| industry: | semiconductor substrate |
| materials: | sic crystal |
| application: | Seed wafers |
| Type: | 4H-N, or High purity un-doped 4h-semi |
| color: | white |
| hardeness: | 9.4 up |
| grade: | optical grade |
| size: | can be customized |
| thermal conductivity: | 4.9w/cm.k |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
6inch production prime SIC crystal Silicon Carbide seed Wafer 0.6mm Thickness for sic growth
high purity undoped or transparent colorless sic optical lens wafer for Quantum light source
we can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 -6inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .
1.material application and advantagement
Applications:
• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes
• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
SILICON CARBIDE MATERIAL PROPERTIES | ||
Polytype | Single Crystal 4H | Single Crystal 6H |
Lattice Parameters | a=3.076 Å | a=3.073 Å |
c=10.053 Å | c=15.117 Å | |
Stacking Sequence | ABCB | ABCACB |
Band-gap | 3.26 eV | 3.03 eV |
Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
Refraction Index | no = 2.719 | no = 2.707 |
ne = 2.777 | ne = 2.755 | |
Dielectric Constant | 9.6 | 9.66 |
Thermal Conductivity | 490 W/mK | 490 W/mK |
Break-Down Electrical Field | 2 – 4 · 108 V/m | 2 – 4 · 108 V/m |
Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
Mohs Hardness | ~9 | |
FAQ:
Q: What's your MOQ and delivery time?
A: (1) For inventory, the MOQ is 3pcs. if 5-10pcs it's better in 10-30days
(2) For 6inch customized products, the MOQ is 10pcs up in 30-50days
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) it is fine If you have your own express account ,If not,we could help you ship them and Freight is in accordance with the actual settlement.
Q: How to pay?
A: T/T, 100％
Q: Do you have standard products?
A:there are not 6inch Our standard products in stock.
but as like substrates 4inch 0.33mm 2sp thickness have some in stock
|
4H-N Silicon Carbide SiC Substrate 2inch 3inch 4inch 6inch 8inch 12inch Prime Grade Dummy Grade
High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate
2 Inch 6H - Semi Silicon Carbide Wafer Low Power Consumption For Detector
2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device
dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped transparent sic Wafer
Customized Size Square Sic Chip Low Lattice Mismatch With High Thermal
3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
Semi - Insulating Silicon Carbide Substrate , Sic Wafer 4H High Purity
4H-SEMI Polished Sic Wafer lens 2INCH 3INCH 4INCH 9.0 Hardness For Device Material
8inch SiC Silicon Carbide Wafer 4H-N Type P/D/R Grade Mohs.9 Multiple Applications Customization
