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| Categories | SiC Substrate |
|---|---|
| Brand Name: | zmkj |
| Model Number: | 4inch--semi high purity |
| Place of Origin: | china |
| MOQ: | 1pcs |
| Price: | by required |
| Supply Ability: | 100pcs/months |
| Delivery Time: | 15days |
| Packaging Details: | Packaged in a class 100 clean room environment, in cassettes of single wafer containers |
| material: | sic crystal |
| industry: | semiconductor wafer |
| application: | semiconductor, Led, device, power electronics,5G |
| color: | blue, green, white |
| type: | 4H,6H, DOPED, no doped, high purity |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
3inch sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem
Application areas
1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
advantagement
• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
Silicon Carbide SiC crystal substrate wafer carborundum
SILICON CARBIDE MATERIAL PROPERTIES
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K | |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
2. substrates size of standard
| 3 inch Diameter 4H Silicon Carbide Substrate Specifications | ||||
| SUBSTRATE PROPERTY | Ultra Grade | Production Grade | Research Grade | Dummy Grade |
| Diameter | 76.2 mm ±0.38 mm | |||
| Surface Orientation | on-axis: {0001} ± 0.2°; off-axis: 4°toward <11-20> ± 0.5° | |||
| Primary Flat Orientation | <11-20> ± 5.0 ̊ | |||
| Secondary Flat Orientation | 90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up | |||
| Primary Flat Length | 22.0 mm ± 2.0 mm | |||
| Secondary Flat Length | 11.0 mm ± 1.5mm | |||
| Wafer Edge | Chamfer | |||
| Micropipe Density | ≤1 micropipes/ cm2 | ≤5 micropipes/ cm2 | ≤10 micropipes/ cm2 | ≤50 micropipes/ cm2 |
| Polytype areas by high-intensity light | None permitted | ≤10% area | ||
| Resistivity | 0.015 Ω·cm~0.028 Ω·cm | (area 75%)0.015Ω·cm~0.028 Ω·cm | ||
| Thickness | 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm | |||
| TTV | ≤10 μm | ≤15 μm | ||
| Bow(absolute value) | ≤15 μm | ≤25 μm | ||
| Warp | ≤35 μm | |||
FAQ:
Q: What's the way of shipping and cost and pay term ?
A:(1) We accept100％ T/T In advance by DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 2pcs.
(2) For customized products, the MOQ is 25pcs up.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape, size based on your needs.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.
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