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Undoped , Indium Antimonide Wafer , 3”, Dummy Grade

Categories InSb Wafer
Brand Name: PAM-XIAMEN
Place of Origin: China
MOQ: 1-10,000pcs
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Delivery Time: 5-50 working days
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name: Indium Antimonide Wafer
Wafer Diamter: 3”
Grade: Dummy Grade
feature: Undoped InSb Wafer
Wafer Thickness: 3″ 800or900±25um
keyword: Indium Antimonide InSb Wafer
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Undoped , Indium Antimonide Wafer , 3”, Dummy Grade

Undoped, Indium Antimonide Wafer, 3”, Dummy Grade


PAM-XIAMEN manufactures high purity single crystal InSb(Indium Antimonide) Wafers for photodiodes or photoelectromagnetic device, Magnetic field sensors using magnetoresistance or the Hall effect, fast transistors (in terms of dynamic switching) due to the high carrier mobility of InSb, in some of the detectors of the Infrared Array Camera on the Spitzer Space Telescope. Our standard wafer diameters range from 1 inch to 3 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer InSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.


Undoped, Indium Antimonide Wafer, 3”, Dummy Grade

Wafer Specification
ItemSpecifications
Wafer Diameter

3″76.2±0.4mm

Crystal Orientation

3″(111)AorB±0.1°

Thickness

3″ 800or900±25um

Primary flat length

3″22±2mm

Secondary flat length

3″11±1mm

Surface FinishP/E, P/P
PackageEpi-Ready,Single wafer container or CF cassette

Electrical and Doping Specification
Conduction Typen-type
DopantUndoped
EPD cm-2≤50
Mobility cm² V-1s-1≥4*105
Carrier Concentration cm-35*1013-3*1014

Optical properties of InSb Wafer

Infrared refractive index4.0
Radiative recombination coefficient5·10-11 cm3s-1

Infrared refractive index

For 120K < T < 360K dn/dT = 1.6·10-11·n

Refractive index n versus photon energy, 300 K.
Normal incidence reflectivity versus photon energy, 300 K.
Absorption coefficient near the intrinsic absorption edge, T = 2K

A ground state Rydberg energy RX1= 0.5 meV.

Absorption coefficient near the intrinsic absorption edge for different temperatures
Absorption edge of pure InSb. T (K):
1. 298;
2. 5K;
Absorption coefficient versus photon energy, T = 300 K.
Absorption coefficient versus photon energy at different doping levels, n-InSb, T = 130 K
no (cm-3):
1. 6.6·1013;
2. 7.5·1017;
3. 2.6·1018;
4. 6·1018;
Absorption coefficient versus photon energy at different doping levels, p-InSb, T = 5K.
po (cm-3):
1. 5.5·1017;
2. 9·1017;
3. 1.6·1018;
4. 2.6·1018;
5. 9.4·1018;
6. 2·1019;

Are You Looking for an InSb substrate?

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InSb wafers, send us enquiry today to learn more about how we can work with you to get you the InSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product Tags:

as cut wafer

  

polished silicon wafer

  
Quality Undoped , Indium Antimonide Wafer , 3”, Dummy Grade for sale
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