Undoped , Indium Antimonide Substrate , 3”, Prime Grade

Undoped, Indium Antimonide Substrate, 3”, Prime Grade

PAM-XIAMEN offers InSb wafer – Indium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths.

Undoped, Indium Antimonide Substrate, 3”, Prime Grade

Electrical properties of InSb Wafer

Band structure and carrier concentration of InSb Wafer include Basic Parameters,Mobility and Hall Effect,Transport Properties in High Electric Fields,Impact Ionization
,Recombination Parameters

Basic Parameters
Mobility and Hall Effect
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Basic Parameters

Mobility and Hall Effect

	Electron Hall mobility versus temperature for different doping levels and different compensation ratios Curve Nd (cm-3) θ = Na/Nd 1. 3.85·1014 0.5 2. 8.5·1014 0.88 3. 9.5·1014 0.98 4. 1.35·1015 0.99
	Electron mobility versus temperature (high temperatures). Solid line is theoretical calculation for electron-drift mobility. Experimental data are Hall mobilities.

For pure n-InSb at T ≥ 200K:
µnH≈7.7·104(T/300)-1.66 (cm2 V-1 s-1).

	Electron mobility versus electron concentration. T = 300 K
	Electron mobility versus electron concentration. T = 77 K
	The electron Hall factor versus carrier concentration. T = 77 K

Hole Hall mobility versus temperature for different hole concentrations. po (cm-3): 1. 8·1014; 2. 3.15·1018; 3. 2.5·1019;

For pure p-InSb at T > 60K:
µpH≈850(T/300)-1.8 (cm2V-1s-1)

	Hall mobility versus hole concentrations: 1. 77 K 2. 290K
	The hole Hall factor versus carrier concentration, 77 K

Transport Properties in High Electric Fields

	Field dependence of the electron drift velocity, 77 K. Solid lines is the Monte Carlo calculation. Points are experimental data.
	Field dependence of the electron drift velocity, 77 K. Solid lines is the Monte Carlo calculation. Points are experimental data.
	Fraction of electrons in the L-valley as a function of electric field F, 77K
	Frequency dependence of the efficiency in LSA mode Fo = F + F1sin(2π·ft): Fo= 2.5 kV cm-1

Impact Ionization

The dependence of generation rate for electrons gn versus electric field F, 300 K

For 300 K, for 30 V/cm < F < 300 V/cm:

gn(F) = 126·F2exp(F/160) (s-1),

where F is in V cm-1.

	The dependence of generation rate for electrons gn versus electric field F, 77 K
	The dependence of ionization rates for electrons αi versus the electric field F, T=78 K
	The dependence of generation rate for holes gp versus the electric field F, T =77K

Recombination Parameters

For pure InSb at T≥250K lifetime of carrier (electrons and holes) is determined by Auger recombination:
τn = τp ≈1/C ni2,
where C≈5·10-26 cm-6 s-1 is the Auger coefficient.
ni is the intrinsic carrier concentration.

	Temperature dependence of surface recombination velocity for p-InSb.
	Temperature dependence of surface recombination velocity for n-InSb.

Are You Looking for an InSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.