N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer

N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer

PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.PAM-XIAMEN can provide epi ready grade InSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

N Type, InSb Wafer, 4”, Prime Grade

Thermal properties of InSb Wafer

	Temperature dependence of thermal conductivity n-InSb. Electron concentration at 78 K n (cm-3): 1. 2·1014; 2. 4.8·1016; 3. 4·1018. Solid line shows the temperature dependence of thermal conductivity at high temperatures
	Temperature dependence of thermal conductivity p-InSb. Electron concentration at 78K p (cm-3): 1. 2.7·1014; 2. 5.3·1015; 3. 7.2·1017; 4. 6·1018.
	Temperature dependence of specific heat at constant pressure.
	Temperature dependence of linear expansion coefficient (low temperatures)
	Temperature dependence of linear expansion coefficient (high temperatures)
	Temperature dependence of Sb saturation vapor pressure

Melting point Tm = 800K.

Are You Looking for an InSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.

As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.