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| Categories | Silicon Nitride Ceramics |
|---|---|
| Brand Name: | ZG |
| Model Number: | MS |
| Certification: | CE |
| Place of Origin: | CHINA |
| MOQ: | 1 piece |
| Price: | Negotiation |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram, MoneyGram |
| Supply Ability: | 10000 pieces per month |
| Delivery Time: | 5-8 working days |
| Packaging Details: | Strong wooden box for global shipping |
| Material: | Silicon Nitride Si3N4 |
| Size: | Customized |
| Color: | Black |
| Features: | high hardness; high corrosion resistance; low density; stability in a wide range of temperatures; precision machining capability. |
| Company Info. |
| HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
Silicon nitrides (Si3N4) feature an excellent combination of material properties. They are nearly as light as silicon carbide (SiC), but their microstructure gives them excellent thermal shock resistance and their high fracture toughness makes them resistant to impacts and shocks.
All these combinations make the material irreplaceable in the production of corrosion-resistant, wear-resistant and heat-resistant products for a variety of industries.
| Properties | Brand of material |
| Composition | SN |
| Si3N4 | |
| Density, g/sm3 | 3,2-3,3 |
| Isolated porosity, % | 0 |
| Hardness, GPa | 13,5-14,0 |
| Bending strength, MPa | 280-310 |
| Compressive strength, MPa | 3700-3900 |
| Thermal conductivity at 20-100°С, W/mK | 20-30 |
| Coefficient of linear thermal expansion at 20-1000°С, 10-6К-1 | 2,6-3,3 |
Maximum operating temperature °С Oxidative environment Reducing or inert environment | 1200 160 |
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
| Physical Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
| Mechanical Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
| Thermal Property | Maximum working temperature | °C | 1500 | 1600 | 1300 | 1400 |
| thermal expansion coefficient 0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
| 300°C) | 16 | 100 | 3 | 25 | ||
| Electrical Property | Resisting rate of Volume | ◎.cm | ||||
| 20°C | >1012 | 106-108 | >1010 | >1011 | ||
| 100°C | 1012-1013 | – | – | >1011 | ||
| 300°C | >1012 | – | – | >1011 | ||
| Insulation Breakdown Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 | |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – | |
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