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| Categories | Silicon Nitride Ceramics |
|---|---|
| Brand Name: | ZG |
| Model Number: | MS |
| Certification: | CE |
| Place of Origin: | CHINA |
| MOQ: | 1 piece |
| Price: | Negotiation |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram, MoneyGram |
| Supply Ability: | 10000 pieces per month |
| Delivery Time: | 5-8 working days |
| Packaging Details: | Strong wooden box for global shipping |
| Material: | Silicon Nitride Si3N4 |
| Size: | Customized |
| Color: | Black |
| Features: | high hardness; high corrosion resistance; low density; stability in a wide range of temperatures; precision machining capability. |
| Company Info. |
| HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
High-performance silicon nitride ceramic materials developed for the aluminum industry has significantly improved thermal and mechanical properties than similar products. On this basis, the "L-shaped high thermal conductivity submerged heating "Appliance" will bring revolutionary progress to aluminum industrial equipment.
The high-temperature strength of silicon nitride ceramics is very good, which ensures that the sealed tube can still be used for a long time under frequent operating conditions.In view of the brittleness of silicon nitride ceramics, large mechanical shocks should be avoided, so attention should be paid to the design and installation of the lifting transmission device.
Advantage:
The high density, high strength and high thermal shock resistance of silicon nitride ceramics determine that it is the best choice for sealing tubes in low pressure die casting.
Compared with aluminum titanate and alumina ceramics, silicon nitride has superior wear resistance, which can ensure the airtightness of the sealed tube for a long time;
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
| Physical Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
| Mechanical Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
| Thermal Property | Maximum working temperature | °C | 1500 | 1600 | 1300 | 1400 |
| thermal expansion coefficient 0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
| 300°C) | 16 | 100 | 3 | 25 | ||
| Electrical Property | Resisting rate of Volume | ◎.cm | ||||
| 20°C | >1012 | 106-108 | >1010 | >1011 | ||
| 100°C | 1012-1013 | – | – | >1011 | ||
| 300°C | >1012 | – | – | >1011 | ||
| Insulation Breakdown Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 | |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 | |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – | |
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