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Sapphire Crystal Growth Furnace CZ method Czochralski Furnace produces high quality sapphire crystals

Categories Semiconductor Equipment
Brand Name: ZMSH
Model Number: Sapphire crystal growth furnace
Certification: rohs
Place of Origin: CHINA
MOQ: 1
Price: by case
Payment Terms: T/T
Pulling rate:: ≤0.1 mm/h
Pulling system jump:: 0.001 mm (max. value measured at pulling rate of 1mm/h)
Scale display resolution:: 10 mg
IF generator controlling accuracy:: 0.1%
Vacuum :: ≤5 Pa
Control method:: Automatic/ Manual
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Sapphire Crystal Growth Furnace CZ method Czochralski Furnace produces high quality sapphire crystals

Product Description


Sapphire Crystal Growth Furnace CZ method Czochralski Furnace produces high quality sapphire crystals


ZMSH's CZ Puller furnaces are available in a wide range of sizes, heating power elements and strengths. According to the process requirements, the heating technology of the direct-drawn furnace can be inductive or resistive. Crucible sizes up to 400 mm in diameter and operating temperatures up to 2300°C.


The pull-through furnaces are equipped with precise and stable pull-out heads with conversion rates ranging from 0.01 to 100 mm/hour. Intuitive, user-friendly crystal pulling software for complete monitoring and control of the growth process. In this way, after dipping into the seed, the crystal can be grown automatically, and the seed growth is based on the predefined crystal geometry created by the user in the software-specific geometry definition window. The variety of Czochra furnace designs makes it ideal for use in laboratories, universities and research and development centers.




Technical Parameter


Effective Puller travel distance:

550 mm

Pulling rate:

0~6000 mm/h

Rotating rate:

0~40 r/min

Rising/Falling speed:

0~6000 mm/h (manual control)

Weight measurement range:

>9 kg

IF generator power:

0~40 Kw (6~16 KHz)

Air filling pressure:

0~0.05 MPa

Vacuum pump:

12 L/s (mechanic pump)

Chamber size:

¢600 IDx1000 mm

Overall size:

1000x1000x330 0 mm

Overall weight:

~1300 Kg

Control method:

Automatic/ Manual



Environment requirement


1. Power supply: three-phase five-wire, 50MHz 380v+/-10%, 50Kw;


2. Installation space height: ≥3.5m;


3. The main body of the equipment should be installed on a solid floor and surrounded by vibration isolation facilities. The vibration transmitted from the outside to the device should be less than 5um.


4. Cooling water: deionized water, flow ≥80L/min, pressure ≥0.3MPa, temperature 24+/-1.5℃, temperature fluctuation ≤1℃/H;


5. Ambient temperature: 24+/-1.5℃, temperature fluctuation ≤1℃/H, humidity <70%;



Sapphire Crystal Growth Furnace display


With its high-precision temperature control, fully automated operation and large-size crystal production capacity, CZ equipment has become the core equipment for sapphire single crystal manufacturing. Through customized design, process support, intelligent operation and maintenance and other comprehensive services, ZMSH helps customers to achieve efficient, low-consumption, high-quality sapphire crystal production, and promote the sustainable development of LED, optical devices, consumer electronics and other industries.






Main Components


DescriptionSpecificationRemark
Furnace chamber size¢600x1000mmTailor-made service can be provided
Pulling systemEffective travel distance 550mm
Pulling motor and driverType 86
Rotating motorType 90
Electrical scaleSeries ALMeasurable weight >9kg
IF power supply40kw
ComputerIndustry- oriented computer19" liquid-crystal display
UPS1kwOnline UPS
Mechanical pump12 L/S
Grating / encoder0.001 mm
Control softwareCryM


Our services


  • Train equipment operation, installation and other operation and maintenance personnel;

  • Training on equipment control and structure principle;

  • Conduct training on software use;

  • Conduct training on equipment troubleshooting;

  • One-year warranty;

  • Other requirements shall be subject to the terms of the contract;

  • Provide lifelong maintenance service (the cost shall be borne by the buyer);



Tag: #Sic wafer, #silicon carbide substrate, #SIC single crystal growth furnace, #Physical Vapor Transfer (PVT), #High temperature Chemical Vapor Precipitation (HTCVD), #Liquid phase method (LPE)

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