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| Categories | Technical Ceramic Parts |
|---|---|
| Brand Name: | ZG |
| Model Number: | MS |
| Certification: | CE |
| Place of Origin: | CHINA |
| MOQ: | 1 piece |
| Price: | USD10/piece |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 10000 pieces per month |
| Delivery Time: | 3 working days |
| Packaging Details: | Strong wooden box for Global shipping |
| Application: | microelectronics , optoelectronics and RF Microwave |
| Diameter: | Ø 3" / Ø 4" GaAs wafer |
| Thickness: | 500 um ~ 625 um |
| Grade: | Epi polished grade / mechanical grade |
| Company Info. |
| HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
InP Based Epi Wafer
We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your InP epi layer structure . Please contact us for more product information or discuss your epi layer structure .
Our reactors are configured for a variety of material systems and
process conditions. We can provide custom epitaxy for a variety of
device applications ranging from LEDs to HEMTs.
| Material Capability | Substrate | Wafer Size |
|---|---|---|
| InP/InP | InP wafer | Up to 4 inch |
| InAlAs/InP | InP waferr | Up to 4 inch |
| InGaAs/InP | InP wafer | Up to 4 inch |
| InGaAsP/InP | InP wafer | Up to 4 inch |
| InGaAs/InGaAsP/InP | InP wafer | Up to 4 inch |
| InP/InAlAs/InP | InP wafer | Up to 4 inch |
Optoelectronic applications:
Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides
Electronic applications:
FETs, HBTs, HEMTs, diodes, Microwave devices.
Epi Layer Structure ( HEMT / HBT )
| Growth | MOCVD |
|---|---|
| Dopant source | P type / Be , N type / Si |
| Cap layer | i-InP layer |
| Active layer | n-InGaAs layer |
| Space layer | i-InGaAsP layer |
| Buffer layer | i-InP layer |
| Substrate | Ø 2" / Ø 3" / Ø 4" InP wafer |
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