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Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer

Categories Technical Ceramic Parts
Brand Name: ZG
Model Number: MS
Certification: CE
Place of Origin: CHINA
MOQ: 1 piece
Price: USD10/piece
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month
Delivery Time: 3 working days
Packaging Details: Strong wooden box for Global shipping
Application: microelectronics , optoelectronics and RF Microwave
Diameter: Ø 3" / Ø 4" GaAs wafer
Thickness: 500 um ~ 625 um
Grade: Epi polished grade / mechanical grade
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Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer


InP Based Epi Wafer


We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your InP epi layer structure . Please contact us for more product information or discuss your epi layer structure .

InP Based Epi Wafer Capability

Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs.

Material CapabilitySubstrateWafer Size
InP/InPInP waferUp to 4 inch
InAlAs/InPInP waferrUp to 4 inch
InGaAs/InPInP waferUp to 4 inch
InGaAsP/InPInP waferUp to 4 inch
InGaAs/InGaAsP/InPInP waferUp to 4 inch
InP/InAlAs/InPInP waferUp to 4 inch

Optoelectronic applications:

Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides


Electronic applications:

FETs, HBTs, HEMTs, diodes, Microwave devices.


Epi Layer Structure ( HEMT / HBT )

GrowthMOCVD
Dopant sourceP type / Be , N type / Si
Cap layeri-InP layer
Active layern-InGaAs layer
Space layeri-InGaAsP layer
Buffer layeri-InP layer
SubstrateØ 2" / Ø 3" / Ø 4" InP wafer
Quality Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer for sale
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