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2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates

Categories Gallium Nitride Wafer
Brand Name: zmkj
Model Number: 4inch AlN
Place of Origin: CHINA
MOQ: 2pc
Price: by case
Payment Terms: L/C, T/T
Delivery Time: 2-4weeks
Packaging Details: single wafer case in 100-grade cleaning room
Material: AlN on wafer
method: HVPE
size: 4inch
thickness: 430+15um or 650um
industry: LD,led,laser device,detector,
surface: double or single side polished
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2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates

2inch ,4inch Gallium Nitride AlN template wafer on sapphire or sic substrates,HVPE Gallium Nitride wafer,AlN templates

  1. III-Nitride(GaN,AlN,InN)

Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.

ProductAluminum nitride (AlN) film
Product Description:AllN Epitxial proposed model saphhire hydride vapor phase epitaxy (HVPE) method. Aluminum nitride film is also cost-effective way to replace the aluminum nitride single crystal substrate. Branch Crystal sincerely welcome your inquiry!
Technical parameters:
Size50mm ± 2mm
Sapphire substrate orientationc-axis (0001) ± 1.0deg
Macro defect density<5cm-2
Available surface area90%
Surface treatment beforeAs Grown Epi-ready
ContainerSingle Chip

Specifications:

10x10x0.5mm, 10x10x1mm, dia2 "x1mm;

Can be customized according to customer demand special orientation and size.

Standard Packaging:1000 clean room, 100 clean bag or single box packaging



GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.



Specifications:

4” AlN Templates2-4inch size also ok
ItemAlN-T
DimensionsФ 100±0.3mm
SubstrateSapphire, SiC, GaN
Thickness1000nm+/- 10% (AlN thickness)
OrientationC-axis(0001) ± 1°
Conduction TypeSemi-Insulating
Dislocation DensityXRD FWHM of (0002) < 200 arcsec.
XRD FWHM of (10-12) < 1000 arcsec
Useable Surface Area> 80%
PolishingStandard: SSP
Option: DSP
PackagePackaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. or single cassettes.

Other size aslike 5x5mm,10x10mm,2inch ,3inch also can be customized.


About Our Team

ZMKJ locates in the city of Shanghai, Which is the best city of China,

and our factory is founded in Wuxi city in 2014, but in the semiconductor material,

have the good experience for almost 10years.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, optoelectronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.




Product Tags:

gan substrate

  

gan template

  
Quality 2inch 4Inch Gallium Nitride GaN AlN Template Wafer On Sapphire,Si Substrates for sale
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