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4 Inch 6 Inch LNOI Wafers For Compact And High-Performance Optical Communication

Categories Piezoelectric Wafer
Brand Name: CQT
Model Number: LNOI Wafer
Certification: ISO:9001, ISO:14001
Place of Origin: China
MOQ: 10 pcs
Price: $2000/pc
Payment Terms: T/T
Supply Ability: 50000 pcs/Month
Delivery Time: 1-4 weeks
Packaging Details: Cassette/ Jar package, vaccum sealed
Product: LiNbO3 On Insulator
Diameter: 4 inch, 6 inch
Top Layer: Lithium Niobate
Top Thickness: 300~600nm
Insolation: SiO2 Thermal Oxide
Insolation Thickness: 2000±15nm; 3000±50nm; 4700±100nm
the support layer: Si、Fused silica
Application: Optical Waveguides and Microwaveguides
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4 Inch 6 Inch LNOI Wafers For Compact And High-Performance Optical Communication

4-Inch 6-Inch LNOI Wafers The Perfect Choice for Compact and High-Performance Optical Communication


Revolutionize Photonics with Ultra-Low-Loss LNOI Wafers

Next-Gen Lithium Niobate-on-Insulator (LNOI) Platform
Unlock unprecedented performance in integrated photonics with our cutting-edge LNOI wafers, engineered for ultra-low optical loss and sub-nanometer surface roughness . Combining stoichiometric LiNbO₃ thin films with thermally oxidized SiO₂ buried layers, our wafers deliver ‌>30x higher nonlinear efficiency‌ than conventional bulk crystals, while enabling CMOS-compatible fabrication.

‌Key Advantages‌
✓ ‌Breakthrough EO Performance‌: Achieve ‌>100 GHz modulation bandwidth‌ with r₃₃ >30 pm/V, ideal for 800G/1.6T coherent transceivers.
✓ ‌Quantum-Ready Precision‌: Custom periodic poling (PPLN) with <5 nm domain error for entangled photon generation.
✓ ‌Power-Hardened Design‌: Withstand >10 MW/cm² optical intensity (Telcordia GR-468 certified).

‌Applications‌
▷ 5G/6G ultra-compact EO modulators
▷ Topological photonic circuits & optical computing
▷ Quantum frequency converters (C/L-band to telecom band)
▷ High-sensitivity LiDAR photodetectors

‌Technical Specifications‌
• Wafer Size: 100/150 mm diameter (2" to 6" customizable)
• LiNbO₃ Layer: X-cut/Z-cut, thickness 300±5 nm (standard)
• Buried Oxide: 1-3 μm SiO₂, breakdown voltage >200 V/μm
• Substrate: High-resistivity Si (>5 kΩ·cm)

LNOI Wafer
StructureLN / SiO2 / SiLTV / PLTV< 1.5 μm ( 5 5 mm2 ) / 95%
DiameterΦ100 ± 0.2 mmEdge Exclution5 mm
Thickness500 ± 20 μmBowWithin 50 μm
Primary Flat Length47.5 ± 2 mm
57.5 ± 2 mm
Edge Trimming2 ± 0.5 mm
Wafer BevelingR TypeEnvironmentalRohs 2.0
Top LN Layer
Average Thickness400/600±10 nmUniformity< 40nm @17 Points
Refraction indexno > 2.2800, ne < 2.2100 @ 633 nmOrientationX axis ± 0.3°
GradeOpticalSurface Ra< 0.5 nm
Defects>1mm None;
1 mm Within 300 total
DelaminationNone
Scratch>1cm None;
1cm Within 3
Primary FlatPerpendicular to +Y Axis ± 1°
Isolation SiO2 Layer
Average Thickness2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nmUniformity< ±1% @17 Points
Fab. MethodThermal OxideRefraction index1.45-1.47 @ 633 nm
Substrate
MaterialSiOrientation<100> ± 1°
Primary Flat Orientation<110> ± 1°Resistivity> 10 kΩ·cm
Backside ContaminationNo visible stainBacksideEtch





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