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YJJ S1226-8BQ High Reliability Low Dark Current Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light

Categories Infrared Photoelectric Sensor
Brand Name: HAMAMATSU
Model Number: S1226-8BQ
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200
Delivery Time: 3 days
Packaging Details: piping
Receiving surface: 5.8 × 5.8 mm
Package category: TO-8
Reverse voltage (Max.): 5V
Dark current (Max.): 20 pA
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YJJ S1226-8BQ High Reliability Low Dark Current Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light

Product Description:

S1226-8BQHigh Reliability Low Dark Current Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light


Features:

Suitable for precision photometry in ultraviolet to visible wavelengths; Suppress near infrared sensitivity

peculiarity

- High UV sensitivity: QE = 75% (λ = 200 nm)

- Suppress near infrared sensitivity

- Low dark current

- High reliability

Receiving surface 5.8 × 5.8 mm
Encapsulation metal
Package category TO-8
Refrigeration uncooled type
Reverse voltage (Max.) 5 V
Spectral response range 190 to 1000 nm
Maximum sensitivity wavelength (typical value) 720 nm
Photosensitivity (typical value) 0.36A /W
Dark current (Max.) 20 pA
Rise time (typical value) 2 μs
Junction capacitance (typical) 1200 pF


Specifications:

Spectral response range190 to 1000 nm
Maximum sensitivity wavelength720 nm
Photosensitivity (typical value)0.36A /W
Dark current (Max.)20 pA


Quality YJJ S1226-8BQ High Reliability Low Dark Current Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light for sale
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