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Categories | RF Transistors |
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Brand Name: | Toshiba |
Model Number: | 2SC5200-O(Q) |
Place of Origin: | JP |
MOQ: | 1pcs |
Price: | Email us for details |
Payment Terms: | T/T, Western Union |
Supply Ability: | 5000 |
Delivery Time: | 1day |
Packaging Details: | Tray |
Description: | 2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) |
Stock: | 2000pcs |
Shipping Method: | LCL, AIR, FCL, Express |
Date Code: | Newest code |
Shipping by: | DHL/UPS/Fedex |
Condition: | New*Original |
Warranty: | 365days |
Lead free: | Rohs Compliant |
Lead times: | Immediately Shipment |
Package: | TO-3P-3 |
Mounting Style: | Through Hole |
Company Info. |
Wisdtech Technology Co.,Limited |
Verified Supplier |
View Contact Details |
Product List |
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole
Toshiba | |
Product Category: | Bipolar Transistors - BJT |
RoHS: | Details |
Through Hole | |
TO-3P-3 | |
NPN | |
Single | |
230 V | |
230 V | |
5 V | |
400 mV | |
15 A | |
150 W | |
30 MHz | |
- | |
+ 150 C | |
2SC | |
Tray | |
Brand: | Toshiba |
Continuous Collector Current: | 15 A |
DC Collector/Base Gain hfe Min: | 55 |
DC Current Gain hFE Max: | 160 |
Height: | 26 mm |
Length: | 20.5 mm |
Product Type: | BJTs - Bipolar Transistors |
Subcategory: | Transistors |
Technology: | Si |
Width: | 5.2 mm |
Unit Weight: | 0.239863 oz |
Power Amplifier Applications
• High breakdown voltage: VCEO = 230 V (min)
• Complementary to 2SA1943
• Suitable for use in 100-W high fidelity audio amplifier’s output stage
Specifications
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