N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC

IRFP4668PBF N-Channel MOSFET 130 A 200 V TO-247AC

Applications

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching Hard Switched and

High Frequency Circuits

Benefits

Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

Absolute Maximum Ratings

Static @ TJ = 25°C (unless otherwise specified)

Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.23mH RG = 25Ω, IAS = 81A, VGS =10V. Part not recommended for use above this value. ISD ≤ 81A, di/dt ≤ 520A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C.

Specifications

Trading Guides

Shenzhen Retechip® Electronic Technology Co., Ltd. was established in 2013, specializing in electronic components distribution business.The products are widely used in communication equipment, power supply, medical electronics, automotive electronics, digital electronics, industrial electronics, display modules, intelligent electronics, new energy, the Internet of things, 5G productsand other fields，With high-quality products, reasonable prices, rapid distributionand timely service, we can provide customers with the most cost-effective products and save customers a lot of time.