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S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp

Categories Flash Memory IC
Brand Name: Cypress Semiconductor Corp
Model Number: S29WS064RABBHW010
MOQ: 1
Price: Based on current price
Payment Terms: T/T
Supply Ability: In stock
Delivery Time: 3-5 work days
Packaging Details: anti-static bag & cardboard box
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Organization: 4M x 16
Memory Interface: Parallel
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-VFBGA
Supplier Device Package: 84-FBGA (11.6x8)
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S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp

Product Details


General Description

The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.

Distinctive Characteristics

■ Single 1.8 V read/program/erase (1.70–1.95 V)
■ 110 nm MirrorBit™ Technology
■ Simultaneous Read/Write operation with zero
latency
■ 32-word Write Buffer
■ Sixteen-bank architecture consisting of 16/8/4
Mwords for WS256N/128N/064N, respectively
■ Four 16 Kword sectors at both top and bottom of
memory array
■ 254/126/62 64 Kword sectors (WS256N/128N/
064N)
■ Programmable burst read modes
— Linear for 32, 16 or 8 words linear read with or
without wrap-around
— Continuous sequential read mode
■ SecSi™ (Secured Silicon) Sector region consisting
of 128 words each for factory and customer
■ 20-year data retention (typical)
■ Cycling Endurance: 100,000 cycles per sector
(typical)
■ RDY output indicates data available to system
■ Command set compatible with JEDEC (42.4)
standard
■ Hardware (WP#) protection of top and bottom
sectors
■ Dual boot sector configuration (top and bottom)
■ Offered Packages
— WS064N: 80-ball FBGA (7 mm x 9 mm)
— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)
■ Low VCC write inhibit
■ Persistent and Password methods of Advanced
Sector Protection
■ Write operation status bits indicate program and
erase operation completion
■ Suspend and Resume commands for Program and
Erase operations
■ Unlock Bypass program command to reduce
programming time
■ Synchronous or Asynchronous program operation,
independent of burst control register settings
■ ACC input pin to reduce factory programming time
■ Support for Common Flash Interface (CFI)
■ Industrial Temperature range (contact factory)

Specifications

AttributeAttribute Value
ManufacturerCypress Semiconductor
Product CategoryMemory ICs
SeriesWS-R
PackagingTray
Mounting-StyleSMD/SMT
Operating-Temperature-Range- 25 C to + 85 C
Package-Case*
Operating-Temperature-25°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply1.7 V ~ 1.95 V
Supplier-Device-Package*
Memory Capacity64M (4M x 16)
Memory-TypeFLASH - NOR
Speed108MHz
ArchitectureSector
Format-MemoryFLASH
StandardCommon Flash Interface (CFI)
Interface-TypeParallel
Organization4 M x 16
Supply-Current-Max44 mA
Data-Bus-Width16 bit
Supply-Voltage-Max1.95 V
Supply-Voltage-Min1.7 V
Package-CaseFBGA-84
Maximum-Clock-Frequency108 MHz
Timing-TypeAsynchronous Synchronous
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part#DescriptionManufacturerCompare
S29WS064R0SBHW000
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0SBHW000
S29WS064R0SBHW013
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0SBHW013
S29WS064RABBHW010
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064RABBHW010
S29WS064R0SBHW010
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0SBHW010
S29WS064R0PBHW010
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0PBHW010
S29WS064R0SBHW003
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0SBHW003
S29WS064RABBHW013
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064RABBHW013
S29WS064R0PBHW013
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0PBHW013
S29WS064RABBHW003
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064RABBHW003
S29WS064R0PBHW000
Memory
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0PBHW000

Descriptions

FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 108MHz 80ns 84-FBGA (11.6x8)
NOR Flash Parallel 1.8V 64M-bit 4M x 16 80ns 84-Pin TFBGA Tray
Flash Memory
Quality S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp for sale
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