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S29CD016J0MFAM010 IC FLASH 16MBIT PAR 56MHZ 80FBGA Infineon Technologies

Categories Flash Memory IC
Brand Name: Infineon Technologies
Model Number: S29CD016J0MFAM010
MOQ: 1
Price: Based on current price
Payment Terms: T/T
Supply Ability: In stock
Delivery Time: 3-5 work days
Packaging Details: anti-static bag & cardboard box
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mbit
Memory Organization: 512K x 32
Memory Interface: Parallel
Clock Frequency: 56 MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 54 ns
Voltage - Supply: 1.65V ~ 2.75V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LBGA
Supplier Device Package: 80-FBGA (13x11)
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S29CD016J0MFAM010 IC FLASH 16MBIT PAR 56MHZ 80FBGA Infineon Technologies

Product Details


General Description

The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O™ manufactured on 170 nm Process Technology.

Distinctive Characteristics

Architecture Advantages
■ Simultaneous Read/Write operations
— Read data from one bank while executing erase/
program functions in other bank
— Zero latency between read and write operations
— Two bank architecture: large bank/small bank
75%/25%
■ User-Defined x32 Data Bus
■ Dual Boot Block
— Top and bottom boot sectors in the same device
■ Flexible sector architecture
— CD032G: Eight 2K Double Word, Sixty-two 16K
Double Word, and Eight 2K Double Word sectors
— CD016G: Eight 2K Double Word, Thirty-two 16K
Double Word, and Eight 2K Double Word sectors
■ Secured Silicon Sector (256 Bytes)
— Factory locked and identifiable: 16 bytes for secure,
random factory Electronic Serial Number; Also know
as Electronic Marking
■ Manufactured on 170 nm Process Technology
■ Programmable Burst interface
— Interfaces to any high performance processor
— Linear Burst Read Operation: 2, 4, and 8 double
word linear burst with or without wrap around
■ Program Operation
— Performs synchronous and asynchronous write
operations of burst configuration register settings
independently
■ Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
■ Compatibility with JEDEC standards (JC42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD/Fujitsu Am29LV/
MBM29LV and Am29F/MBM29F flash memories

Performance Characteristics

■ High performance read access
— Initial/random access times of 48 ns (32 Mb) and 54
ns (16 Mb)
— Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
■ Ultra low power consumption
— Burst Mode Read: 90 mA @ 75 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 µA max
■ 1 million write cycles per sector typical
■ 20 year data retention typical
■ VersatileI/O™ control
— Generates data output voltages and tolerates data
input voltages as determined by the voltage on the
VIO pin
— 1.65 V to 3.60 V compatible I/O signals

Software Features

■ Persistent Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector (requires only VCC levels)
■ Password Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector using a user-definable 64-bit
password
■ Supports Common Flash Interface (CFI)
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion

Hardware Features

■ Program Suspend/Resume & Erase Suspend/
Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
■ Hardware Reset (RESET#), Ready/Busy# (RY/
BY#), and Write Protect (WP#) inputs
■ ACC input
— Accelerates programming time for higher throughput
during system production
■ Package options
— 80-pin PQFP
— 80-ball Fortified BGA
— Pb-free package option also available
— Known Good Die

Specifications

AttributeAttribute Value
ManufacturerCypress Semiconductor
Product CategoryMemory ICs
SeriesCD-J
TypeBoot Block
PackagingTray
Mounting-StyleSMD/SMT
Operating-Temperature-Range- 40 C to + 125 C
Package-Case80-LBGA
Operating-Temperature-40°C ~ 125°C (TA)
InterfaceParallel
Voltage-Supply1.65 V ~ 2.75 V
Supplier-Device-Package80-Fortified BGA (13x11)
Memory Capacity16M (512K x 32)
Memory-TypeFLASH - NOR
Speed56MHz
ArchitectureSector
Format-MemoryFLASH
StandardCommon Flash Interface (CFI)
Interface-TypeParallel
Organization512 k x 32
Supply-Current-Max90 mA
Data-Bus-Width32 bit
Supply-Voltage-Max2.75 V
Supply-Voltage-Min2.5 V
Package-CaseFBGA-80
Maximum-Clock-Frequency56 MHz
Timing-TypeAsynchronous Synchronous
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Descriptions

FLASH - NOR Memory IC 16Mb (512K x 32) Parallel 56MHz 54ns 80-FBGA (13x11)
NOR Flash Parallel 2.6V 16M-bit 512K x 32 54ns Automotive 80-Pin Fortified BGA Tray
Flash Memory
Quality S29CD016J0MFAM010 IC FLASH 16MBIT PAR 56MHZ 80FBGA Infineon Technologies for sale
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