MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

GENERAL DESCRIPTION

The DDR333 SDRAM is a high-speed CMOS, dy namic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 continues to use the JEDEC standard SSTL_2 interface and the 2n-prefetch architecture.

FEATURES

• 167 MHz Clock, 333 Mb/s/p data rate
•VDD= +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
• Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte)
• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has two - one per byte)
• Programmable burst lengths: 2, 4, or 8
• Concurrent Auto Precharge option supported
• Auto Refresh and Self Refresh Modes
• FBGA package available
• 2.5V I/O (SSTL_2 compatible)
• tRAS lockout (tRAP =tRCD)
• Backwards compatible with DDR200 and DDR266