Home >

70V657S10BFG IC SRAM 1.125MBIT PAR 208FPBGA Renesas Electronics America Inc

Name: 70V657S10BFG IC SRAM 1125MBIT PAR 208FPBGA Renesas Electronics America Inc
Brand: Renesas Electronics America Inc
Price: 1 USD

70V657S10BFG IC SRAM 1.125MBIT PAR 208FPBGA Renesas Electronics America Inc

Categories	Flash Memory IC
Brand Name:	Renesas Electronics America Inc
Model Number:	70V657S10BFG
MOQ:	1
Price:	Based on current price
Payment Terms:	T/T
Supply Ability:	In stock
Delivery Time:	3-5 work days
Packaging Details:	anti-static bag & cardboard box
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	1.125Mbit
Memory Organization:	32K x 36
Memory Interface:	Parallel
Clock Frequency:	-
Write Cycle Time - Word, Page:	10ns
Access Time:	10 ns
Voltage - Supply:	3.15V ~ 3.45V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	208-LFBGA
Supplier Device Package:	208-CABGA (15x15)

Contact Now

Add to Cart

Company Info.

Sanhuang electronics (Hong Kong) Co., Limited

Verified Supplier

View Contact Details

Product List

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

Product Details
Company Profile

70V657S10BFG IC SRAM 1.125MBIT PAR 208FPBGA Renesas Electronics America Inc

Product Details

Description

The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location
◆ High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
◆ Dual chip enables allow for depth expansion without external logic
◆ IDT70V659/58/57 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device
◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave
◆ Busy and Interrupt Flags
◆ On-chip port arbitration logic
◆ Full on-chip hardware support of semaphore signaling between ports
◆ Fully asynchronous operation from either port
◆ Separate byte controls for multiplexed bus and bus matching compatibility
◆ Supports JTAG features compliant to IEEE 1149.1
◆ LVTTL-compatible, single 3.3V (±150mV) power supply for core
◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port
◆ Available in a 208-pin Plastic Quad Flatpack, 208-ball fine pitch Ball Grid Array, and 256-ball Ball Grid Array
◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

Specifications

Attribute	Attribute Value
Manufacturer	Integrated Circuit Systems
Product Category	Memory ICs
Series	-
Packaging	Tray Alternate Packaging
Package-Case	208-LFBGA
Operating-Temperature	0°C ~ 70°C (TA)
Interface	Parallel
Voltage-Supply	3.15 V ~ 3.45 V
Supplier-Device-Package	208-CABGA (15x15)
Memory Capacity	1.125M (32K x 36)
Memory-Type	SRAM - Dual Port, Asynchronous
Speed	10ns
Format-Memory	RAM

Functional compatible componentForm,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
IDT70V657S10BFG Memory	Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208	Integrated Device Technology Inc	70V657S10BFG vs IDT70V657S10BFG
70V657S10BFG8 Memory	CABGA-208, Reel	Integrated Device Technology Inc	70V657S10BFG vs 70V657S10BFG8
IDT70V657S10BFG8 Memory	Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208	Integrated Device Technology Inc	70V657S10BFG vs IDT70V657S10BFG8
70V657S10BC Memory	CABGA-256, Tray	Integrated Device Technology Inc	70V657S10BFG vs 70V657S10BC
IDT70V657S10DRG Memory	Dual-Port SRAM, 32KX36, 10ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, QFP-208	Integrated Device Technology Inc	70V657S10BFG vs IDT70V657S10DRG
IDT70V657S10BCG Memory	Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	Integrated Device Technology Inc	70V657S10BFG vs IDT70V657S10BCG
70V657S10BCG Memory	CABGA-256, Tray	Integrated Device Technology Inc	70V657S10BFG vs 70V657S10BCG
IDT70V657S10BC Memory	Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	Integrated Device Technology Inc	70V657S10BFG vs IDT70V657S10BC
70V657S10DRG Memory	PQFP-208, Tray	Integrated Device Technology Inc	70V657S10BFG vs 70V657S10DRG
70V657S10BCG8 Memory	Dual-Port SRAM, 32KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	Integrated Device Technology Inc	70V657S10BFG vs 70V657S10BCG8

Descriptions

SRAM - Dual Port, Asynchronous Memory IC 1.125Mb (32K x 36) Parallel 10ns 208-FPBGA (15x15)

SRAM 32Kx36 STD-PWR, 3.3V DUAL-PORT RAM

70V657S10BFG IC SRAM 1.125MBIT PAR 208FPBGA Renesas Electronics America Inc

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Sanhuang electronics (Hong Kong) Co., Limited
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!