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CY7C1414BV18-200BZC IC SRAM 36MBIT PARALLEL 165FBGA Cypress Semiconductor Corp

Categories Flash Memory IC
Brand Name: Cypress Semiconductor Corp
Model Number: CY7C1414BV18-200BZC
MOQ: 1
Price: Based on current price
Payment Terms: T/T
Supply Ability: In stock
Delivery Time: 3-5 work days
Packaging Details: anti-static bag & cardboard box
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mbit
Memory Organization: 1M x 36
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)
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CY7C1414BV18-200BZC IC SRAM 36MBIT PARALLEL 165FBGA Cypress Semiconductor Corp

Product Details


Functional Description

The CY7C1425KV18, CY7C1412KV18, and CY7C1414KV18 are 1.8 V synchronous pipelined SRAMs, equipped with QDR II architecture. QDR II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations.

Features

■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 333 MHz clock for high bandwidth
■ Two-word burst on all accesses
■ Double data rate (DDR) Interfaces on both read and write ports (data transferred at 666 MHz) at 333 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high speed systems
■ Single multiplexed address input bus latches address inputs for both read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ QDR® II operates with 1.5 cycle read latency when DOFF is asserted HIGH
■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW
■ Available in × 9, × 18, and × 36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD
❐ Supports both 1.5 V and 1.8 V I/O supply
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free Packages
■ Variable drive HSTL output buffers
■ JTAG 1149.1 compatible test access port
■ Phase locked loop (PLL) for accurate data placement

Specifications

AttributeAttribute Value
ManufacturerCypress Semiconductor
Product CategoryMemory ICs
Series-
PackagingTray
Package-Case165-LBGA
Operating-Temperature0°C ~ 70°C (TA)
InterfaceParallel
Voltage-Supply1.7 V ~ 1.9 V
Supplier-Device-Package165-FBGA (15x17)
Memory Capacity36M (1M x 36)
Memory-TypeSRAM - Synchronous, QDR II
Speed200MHz
Format-MemoryRAM

Descriptions

SRAM - Synchronous, QDR II Memory IC 36Mb (1M x 36) Parallel 200MHz 165-FBGA (15x17)
Quality CY7C1414BV18-200BZC IC SRAM 36MBIT PARALLEL 165FBGA Cypress Semiconductor Corp for sale
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