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IRFP9240 General Purpose Rectifier Diode P Channel With 150W Through Hole

Categories Electronic Components
Brand Name: VISHAY
Model Number: IRFP9240
Place of Origin: CHINA
MOQ: 10 PCS
Price: Negotiation
Payment Terms: T/T, Western Union , ESCROW
Supply Ability: 10000PCS
Delivery Time: STOCK
Packaging Details: TUBE
Description: P-Channel 200 V 12A (Tc) 150W (Tc) Through Hole TO-247AC
Categories: Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Power Dissipation (Max): 150W (Tc)
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IRFP9240 General Purpose Rectifier Diode P Channel With 150W Through Hole

IRFP9240 General Purpose Rectifier Diode P-Channel 200V 12A (Tc) 150W (Tc) Through Hole


FEATURES


• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC


DESCRIPTION


Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.


Product AttributesSelect All
CategoriesDiscrete Semiconductor Products
 Transistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Series-
PackagingTube
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500 mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3



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