NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

NDT456P P-Channel Enhancement Mode Field Effect Transistor

Features

♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V

♦High density cell design for extremely low RDS(ON)

♦High power and current handling capability in a widely used surface mount package.

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electronic components that are hard to find and even obsolete. We have taken pride in our innovation, reliability and service, especially in the semiconductor marketplace.
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