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T1G6001032-SM

Categories RF JFET Transistors
Transistor Polarity :: N-Channel
Technology :: GaN SiC
Product Category :: RF JFET Transistors
Mounting Style :: SMD/SMT
Gain :: 19 dB
Transistor Type :: HEMT
Pd - Power Dissipation :: 16 W
Vds - Drain-Source Breakdown Voltage :: 32 V
Packaging :: Tray
Maximum Drain Gate Voltage :: - 2.9 V
Id - Continuous Drain Current :: 1.2 A
Manufacturer :: Qorvo
Description: RF JFET Transistors DC-6GHz 32Volt GaN 10 Watt Peak
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T1G6001032-SM

The T1G6001032-SM,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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