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2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

Categories Electronic IC Chips
Brand Name: NEC
Model Number: 2SB1261
Place of Origin: CHINA
MOQ: 10 PCS
Price: Negotiation
Payment Terms: T/T, Western Union , ESCROW
Supply Ability: 10000PCS
Delivery Time: STOCK
Packaging Details: BAG
Description: Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
Collector-Base Voltage: -60V
Collector-Emitter Voltage: -60V
Emitter-Base Voltage: -7V
Collector Current-Continuous: -3A
Collector Power Dissipation @TC=25℃: 10W
Junction Temperature: 150℃
Storage Temperature: -55~150℃
PACKAGE: TO126
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2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

2SB1261 General Purpose Rectifier Diode PNP Silicon Epitaxial Transistors
DESCRIPTION
·Low Collector Saturation Voltage
·High Power Dissipation- : PC= 10W(Max)@TC=25℃
·Complement to Type 2SD1899-K


APPLICATIONS
·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits.
Quality 2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor for sale
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