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IRFPC60PBF Mosfet Power Transistor 600V 16A Through Hole TO-247-3

Categories Mosfet Power Transistor
Brand Name: IR
Model Number: IRFPC60PBF
Certification: CE
Place of Origin: CN
MOQ: 30 pieces
Price: negotiable
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 10Kpcs per year
Delivery Time: 1-2 working days
Packaging Details: Plastic Tubes
Goods Condition: Brand New
Part Status: Active
Lead Free / Rohs: Complaint
Function: MOSFET
Mounting Type: Through Hole
Package: TO247
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IRFPC60PBF Mosfet Power Transistor 600V 16A Through Hole TO-247-3

IRFPC60PBF MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ManufacturerVishay Siliconix
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 25V
FET Feature-
Power Dissipation (Max)280W (Tc)
Rds On (Max) @ Id, Vgs400 mOhm @ 9.6A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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Quality IRFPC60PBF Mosfet Power Transistor 600V 16A Through Hole TO-247-3 for sale
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