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Through Hole TO-247-3 Integrated Circuit IC Chip IRFPF50PBF NChannel MOSFET 900V 6.7A 190W

Categories Integrated Circuit IC Chip
Brand Name: IOR
Model Number: IRFPF50PBF
Certification: ROHS
Place of Origin: CHINA
MOQ: 20pcs
Price: negotiate
Payment Terms: Western Union, T/T,Paypal
Supply Ability: Consultation
Delivery Time: 2-3 working days
Packaging Details: 50PCS/Standard Package
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900V
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 150°C
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Through Hole TO-247-3 Integrated Circuit IC Chip IRFPF50PBF NChannel MOSFET 900V 6.7A 190W

IRFPF50PBF N-Channel MOSFET 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247-3

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching • Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C

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Quality Through Hole TO-247-3 Integrated Circuit IC Chip IRFPF50PBF NChannel MOSFET 900V 6.7A 190W for sale
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