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TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

Categories Electronic IC Chips
Brand Name: VISHAY
Model Number: TSML1020
Certification: Original Factory Pack
Place of Origin: Original
MOQ: 20pcs
Price: Negotiation
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 5200PCS
Delivery Time: 1 Day
Packaging Details: please contact me for details
Description: Infrared (IR) Emitter 940nm 1.2V 100mA 3mW/sr @ 20mA 24° 2-SMD, Gull Wing
VR: 5 V
IF: 100 mA
IFM: 200 mA
IFSM: 1.0 A
PV: 190 mW
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TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode


High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs


Features
• Outstanding high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity ϕ = ± 12°
• Peak waveleCM GROUPh λp = 950 nm
• High reliability
• Matched Phototransistor series: TEMT1000
• Versatile terminal configurations
• Lead-free component

Description
TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package.

This technology represents best performance for radiant power under pulse conditions, forward voltage and reliability

Typical Characteristics (Tamb = 25 °C unless otherwise specified)


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Quality TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs 	Rectifier Diode for sale
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