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NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

Categories Electronic IC Chips
Model Number: NDT456P
Certification: new & original
Place of Origin: original factory
MOQ: 20pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 6900pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Description: P-Channel 30 V 7.5A (Ta) 3W (Ta) Surface Mount SOT-223-4
Drain-Source Voltage: -30 V
Gate-Source Voltage: ±20 V
Operating and Storage Temperature: -65 to 150 °C
Package: SOT-223
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NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor


NDT456P P-Channel Enhancement Mode Field Effect Transistor


General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.


Features

  • -7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V
  • RDS(ON) = 0.045 W @ VGS = -4.5 V.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.

Absolute Maximum Ratings TA = 25°C unless otherwise noted


SymbolParameterNDT456PUnits
VDSSDrain-Source Voltage-30V
VGSSGate-Source Voltage±20V
ID

Drain Current - Continuous (Note 1a)

- Pulsed

±7.5A
±20A
PD

Maximum Power Dissipation (Note 1a)

(Note 1b)

(Note 1c)

3W
1.3W
1.1W
TJ ,TSTGOperating and Storage Temperature Range-65 to 150°C

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