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MPSA42 Power Mosfet Transistor Low current NPN high voltage transistors

Categories	Electronic IC Chips
Model Number:	MPSA42
Certification:	new & original
Place of Origin:	original factory
MOQ:	20pcs
Price:	Negotiate
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	20000pcs
Delivery Time:	1 day
Packaging Details:	Please contact me for details
Description:	Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 625 mW Through Hole TO-92-3
collector-base voltage:	300 V
collector-emitter voltage:	300 V
emitter-base voltage:	6 V
collector current (DC):	100 mA
peak collector current:	200 mA
junction temperature:	150 °C

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Company Info.

ChongMing Group (HK) Int'l Co., Ltd

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MPSA42; MPSA43

NPN high-voltage transistors

FEATURES

• Low current (max. 100 mA)

• High voltage (max. 300 V).

APPLICATIONS

• Video

• Telephony

• Professional communication equipment.

DESCRIPTION

NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complement: MPSA92.

PINNING

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage MPSA42 MPSA43	open emitter	− −	300 200	V V
V_CEO	collector-emitter voltage MPSA42 MPSA43	open base	− −	300 200	V V
V_EBO	emitter-base voltage	open collector	−	6	V
I_C	collector current (DC)		−	100	mA
I_CM	peak collector current		−	200	mA
I_BM	peak base current		−	100	mA
P_tot	total power dissipation	T_amb ≤ 25 °C	−	500	mW
T_stg	storage temperature		−65	+150	°C
T_j	junction temperature		−	150	°C
T_amb	ambient temperature		−65	+150	°C

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Product Tags:

multi emitter transistor

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