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IPD320N20N3G Ic Integrated Circuit TO-252

Categories Ic Integrated Circuit
Brand Name: INFINEON
Model Number: IPD320N20N3G
Place of Origin: original
MOQ: 1pcs
Payment Terms: D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 97830pcs
Delivery Time: 3
Packaging Details: 4000
Stock: 8000+
Price: Negotiate
quality:: Brand new unused
Package / box:: TO-252
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IPD320N20N3G Ic Integrated Circuit TO-252

ISO9001.pdf

Application: IPD320N20N3G is an N-channel MOSFET transistor used for high-efficiency DC-DC converters and inverter applications. It can operate at high voltage, with low conduction resistance and high switching speed.
Conclusion: IPD320N20N3G has the characteristics of high efficiency, high voltage, and low conduction resistance, making it suitable for high-power DC-DC converters and inverters. It can improve the energy efficiency of the system, reduce power loss, and have a longer service life.
Parameters:
Vds (max)=200V (maximum withstand voltage)
Id=320A (maximum drain current)
Rds (on)=3.3m Ω (conduction resistance)
Qg=230nC (gate charge)
Vgs (th)=4V (gate threshold voltage)
Ciss=12300pF (input capacitance)
Coss=1170pF (output capacitance)
Crss=570pF (reverse transmission capacitance)

Product Technical Specifications
EU RoHSCompliant with Exemption聽
ECCN (US)EAR99
Part StatusUnconfirmed
SVHCYes
SVHC Exceeds ThresholdYes
AutomotiveNo
PPAPNo
Product CategoryPower MOSFET
ConfigurationSingle
Process TechnologyOptiMOS 3
Channel ModeEnhancement
Channel TypeN
Number of Elements per Chip1
Maximum Drain Source Voltage (V)200
Maximum Gate Source Voltage (V)卤20
Maximum Gate Threshold Voltage (V)4
Operating Junction Temperature (掳C)-55 to 175
Maximum Continuous Drain Current (A)34
Maximum Gate Source Leakage Current (nA)100
Maximum IDSS (uA)1
Maximum Drain Source Resistance (MOhm)32@10V
Typical Gate Charge @ Vgs (nC)22@10V
Typical Gate Charge @ 10V (nC)22
Typical Gate to Drain Charge (nC)3
Typical Gate to Source Charge (nC)8
Typical Reverse Recovery Charge (nC)500
Typical Switch Charge (nC)5
Typical Input Capacitance @ Vds (pF)1770@100V
Typical Reverse Transfer Capacitance @ Vds (pF)4@100V
Minimum Gate Threshold Voltage (V)2
Typical Output Capacitance (pF)135
Maximum Power Dissipation (mW)136000
Typical Fall Time (ns)4
Typical Rise Time (ns)9
Typical Turn-Off Delay Time (ns)21
Typical Turn-On Delay Time (ns)11
Minimum Operating Temperature (掳C)-55
Maximum Operating Temperature (掳C)175
PackagingTape and Reel
Maximum Pulsed Drain Current @ TC=25掳C (A)136
Maximum Junction Ambient Thermal Resistance on PCB (掳C/W)50
Typical Diode Forward Voltage (V)0.9
Typical Gate Plateau Voltage (V)4.4
Typical Reverse Recovery Time (ns)110
Maximum Diode Forward Voltage (V)1.2
Typical Gate Threshold Voltage (V)3
Maximum Positive Gate Source Voltage (V)20
MountingSurface Mount
Package Height2.41(Max)
Package Width6.22(Max)
Package Length6.73(Max)
PCB changed2
TabTab
Standard Package NameTO-252
Supplier PackageDPAK
Pin Count3
Lead ShapeGull-wing
Quality IPD320N20N3G Ic Integrated Circuit TO-252 for sale
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