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Categories | Flash Memory IC Chip |
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Brand Name: | Ti |
Model Number: | SI4425DDY-T1-GE3 |
MOQ: | Contact us |
Price: | Contact us |
Payment Terms: | Paypal, Western Union, TT |
Supply Ability: | 50000 Pieces per Day |
Delivery Time: | The goods will be shipped within 3 days once received fund |
Packaging Details: | SOT223 |
Description: | P-Channel 30 V 19.7A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC |
Manufacturer: | Vishay |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | SO-8 |
Number of Channels: | 1 Channel |
SI4425DDY-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs SO-8
FEATURES
TrenchFET® Power MOSFET
100 % Rg Tested
APPLICATIONS
•Load Switches
- Notebook PCs
- Desktop PCs
PRODUCT SUMMARY | |||
VDS (V) | RDS(on) (Ω) | ID (A)a | Qg (Typ.) |
- 30 | 0.0098 at VGS = 10 V | - 19.7 | 27 nC |
0.0165 at VGS = 4.5 V | - 15.2 |
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted | ||||
Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | - 30 | V | |
Gate-Source Voltage | VGS | ± 20 | ||
Continuous Drain Current (TJ = 150 °C) | TC =25°C | ID | - 19.7 | A |
TC =70°C | - 15.7 | |||
TA = 25 °C | - 13b, c | |||
TA = 70 °C | - 10.4b, c | |||
Pulsed Drain Current | IDM | - 50 | ||
Continous Source-Drain Diode Current | TC =25°C | IS | - 4.7 | |
TA = 25 °C | - 2.1b, c | |||
Maximum Power Dissipation | TC =25°C | PD | 5.7 | W |
TC =70°C | 3.6 | |||
TA = 25 °C | 2.5b, c | |||
TA = 70 °C | 1.6b, c | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to 150 | °C |
THERMAL RESISTANCE RATINGS | |||||
Parameter | Symbol | Typical | Maximum | Unit | |
Maximum Junction-to-Ambientb, d | t ≤ 10 s | RthJA | 35 | 50 | °C/W |
Maximum Junction-to-Foot (Drain) | Steady State | RthJF | 18 | 22 |
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