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SI4425DDY-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs SO-8

Categories Flash Memory IC Chip
Brand Name: Ti
Model Number: SI4425DDY-T1-GE3
MOQ: Contact us
Price: Contact us
Payment Terms: Paypal, Western Union, TT
Supply Ability: 50000 Pieces per Day
Delivery Time: The goods will be shipped within 3 days once received fund
Packaging Details: SOT223
Description: P-Channel 30 V 19.7A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Number of Channels: 1 Channel
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SI4425DDY-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs SO-8

SI4425DDY-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs SO-8


FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET

  • 100 % Rg Tested


APPLICATIONS

•Load Switches

- Notebook PCs

- Desktop PCs


PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)a

Qg (Typ.)

- 30

0.0098 at VGS = 10 V

- 19.7

27 nC

0.0165 at VGS = 4.5 V

- 15.2



ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC =25°C

ID

- 19.7

A

TC =70°C

- 15.7

TA = 25 °C

- 13b, c

TA = 70 °C

- 10.4b, c

Pulsed Drain Current

IDM

- 50

Continous Source-Drain Diode Current

TC =25°C

IS

- 4.7

TA = 25 °C

- 2.1b, c

Maximum Power Dissipation

TC =25°C

PD

5.7

W

TC =70°C

3.6

TA = 25 °C

2.5b, c

TA = 70 °C

1.6b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C


THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t ≤ 10 s

RthJA

35

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

18

22

Quality SI4425DDY-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs SO-8 for sale
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