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H11F3SM Electronic IC Chips Transistor IC Chip Electronics Rectifier Diode

Categories Electronic IC Chips
Brand Name: onsemi
Model Number: H11F3SM
Certification: Original Factory Pack
Place of Origin: China
MOQ: 25pcs
Price: Negotiation
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 1300PCS
Delivery Time: 1 Day
Packaging Details: DIP-6
Temperature Range: –55°C to +150°C
Payment Term: T/T, Paypal, Western Union
Voltage: 10V
Current: 5A
Package: DIP-6
Factory Package: TUBE
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H11F3SM Electronic IC Chips Transistor IC Chip Electronics Rectifier Diode

H11F3SM Electrnocs Component Transistor Chip IC Electronics Rectifier Diode
H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Features
As a remote variable resistor:
■ ≤ 100Ω to ≥ 300MΩ
■ ≤ 15pF shunt capacitance
■ ≥ 100GΩ I/O isolation resistance As an analog switch:
■ Extremely low offset voltage
■ 60 Vpk-pk signal capability
■ No charge injection or latch-up
■ UL recognized (File #E90700)

Applications
As a remote variable resistor:
■ Isolated variable attenuator
■ Automatic gain control
■ Active filter fine tuning/band switching As an analog switch:
■ Isolated sample and hold circuit
■ Multiplexed, optically isolated A/D conversion

General Description

The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector.

The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals.

The H11FXM series devices are mounted in dual in-line packages.


ABSOLUTE MAXIMUM RATINGS(1)

D V rain-to-Source Voltage DSS 3 V 0 G V
ate-to-Source Voltage GSS ± V 15
D I rain Current (DC) D 2 A
D I rain Current (Pulse) DP PW≤10µs, duty cycle≤1 8A %
Allowable Power Dissipation PD 6 W
PD 1 W .5 T P otal Dissipation T 2 W
C h hannel Temperature Tc 150
S g torage Temperature Tst –55 to +150


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Package Dimensions
unit:mm 2120

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