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| Categories | MOSFET Power Electronics |
|---|---|
| Brand Name: | Infineon Technologies |
| Model Number: | IRFB4229PBF |
| Place of Origin: | Multi-origin |
| MOQ: | 1 |
| Price: | Negotiable |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 999999 |
| Delivery Time: | 1-7days |
| Packaging Details: | Standard |
| Product Type: | MOSFET Power Electronics |
| Manufacturer: | Infineon Technologies |
| Manufacturer Product Number: | IRFB4229PBF |
| Description: | MOSFET N-CH 250V 46A TO220AB |
| Manufacturer Standard Lead Time: | 1-7days |
| Detailed Description: | N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB |
IRFB4229PBF Power MOSFET
Product Features:
• N-Channel Enhancement Mode
• 100V, 37A, RDS(on) = 0.065Ω
• Low Gate Charge (Typ. 11nC)
• Low Crss (Typ. 0.13A)
• Fast Switching
• RoHS Compliant
• Lead-Free
• Halogen-Free
Product Description:
The IRFB4229PBF is a N-Channel MOSFET designed for power switching applications. It features an on-resistance of 0.065Ω, a current rating of 37A, and an operating voltage of 100V. The device has a low gate charge of 11nC and a low Crss of 0.13A. It is RoHS Compliant and Lead-Free/Halogen-Free.
Product Status | Active | |
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 46mOhm @ 26A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 4560 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 330W (Tc) | |
Operating Temperature | -40°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-220AB | |
Package / Case | ||
Base Product Number |
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