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IRFB7434PBF N Channel Mosfet Ic 40 V 195A Tc 294W Tc Through Hole TO-220AB

Categories Diode Transistor
Brand Name: Infineon Technologies
Model Number: IRFB7434PBF
Certification: RoHS
Place of Origin: United States
MOQ: 50 PCS
Price: Negotiable
Payment Terms: L/C, D/A, D/P, T/T
Supply Ability: 20K PCS
Delivery Time: 2-3 DAYS
Packaging Details: 50 PCS/Tube
Category: Single FETs, MOSFETs
Mfr: Infineon Technologies
Series: HEXFET®, StrongIRFET™
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Power Dissipation (Max): 294W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
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IRFB7434PBF N Channel Mosfet Ic 40 V 195A Tc 294W Tc Through Hole TO-220AB

IRFB7434PBF N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB


Features:

CategorySingle FETs, MOSFETs
MfrInfineon Technologies
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs324 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10820 pF @ 25 V
Power Dissipation (Max)294W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

Additional Resources

ATTRIBUTEDESCRIPTION
Other NamesSP001575514
2156-IRFB7434PBF
IFEINFIRFB7434PBF
Standard Package50

Data Picture:https://www.infineon.com/dgdl/irfb7434pbf.pdf?fileId=5546d462533600a401535616a43e1e55



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