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| Categories | Mosfet Power Transistor |
|---|---|
| Brand Name: | Hua Xuan Yang |
| Model Number: | 12N10 |
| Certification: | RoHS、SGS |
| Place of Origin: | ShenZhen China |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Delivery Time: | 1 - 2 Weeks |
| Packaging Details: | Boxed |
| Product name: | Mosfet Power Transistor |
| APPLICATION: | Power Management |
| FEATURE: | Excellent RDS(on) |
| Power mosfet transistor: | Enhancement Mode Power MOSFET |
HXY12N10 N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FEATURES
● VDS =100V,ID =12A
RDS(ON) < 130mΩ @ VGS =10V
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 100 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Drain Current-Continuous | ID | 12 | A |
| Drain Current-Continuous(TC=100℃) | ID (100℃) | 6.5 | A |
| Pulsed Drain Current | IDM | 38.4 | A |
| Maximum Power Dissipation | PD | 30 | W |
| Derating factor | 0.2 | W/℃ | |
| Single pulse avalanche energy (Note 5) | EAS | 20 | mJ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 175 | ℃ |
Note: Pin Assignment: G: Gate D: Drain S: Source
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
| PARAMETER | SYMBOL | RATINGS | UNIT | |
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 10 | A | |
| Pulsed Drain Current (Note 2) | IDM | 40 | A | |
| Avalanche Current (Note 2) | IAR | 8.0 | A | |
| Avalanche Energy | Single Pulsed (Note 3) | EAS | 365 | mJ |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | ns | |
Power Dissipation | TO-220 | PD | 156 | W |
| TO-220F1 | 50 | W | ||
| TO-220F2 | 52 | W | ||
| Junction Temperature | TJ | +150 | °C | |
| Storage Temperature | TSTG | -55 ~ +150 | °C | |
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
4. Repetitive Rating: Pulse width limited by maximum junction temperature.
5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250μA | 100 | 110 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1.2 | 1.8 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID =8A | 98 | 130 | m Ω | |
| Forward Transconductance | gFS | VDS=25V,ID=6A | 3.5 | - | - | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, F=1.0MHz | - | 690 | - | PF |
| Output Capacitance | Coss | - | 120 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 90 | - | PF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω | - | 11 | - | nS |
| Turn-on Rise Time | tr | - | 7.4 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 35 | - | nS | |
| Turn-Off Fall Time | tf | - | 9.1 | - | nS | |
| Total Gate Charge | Qg | VDS=30V,ID=3A, VGS=10V | - | 15.5 | nC | |
| Gate-Source Charge | Qgs | - | 3.2 | - | nC | |
| Gate-Drain Charge | Qgd | - | 4.7 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=9.6A | - | - | 1.2 | V |
| Diode Forward Current (Note 2) | IS | - | - | 9.6 | A | |
| Reverse Recovery Time | trr | TJ = 25°C, IF =9.6A di/dt = 100A/μs(Note3) | - | 21 | nS | |
| Reverse Recovery Charge | Qrr | - | 97 | nC | ||
| Forward Turn-On Time | ton | Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) | ||||
Essentially independent of operating temperature.Notes: 1. Pulse
Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
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