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2N7002 Mosfet N Channel SMD 60V 115MA Integrated Circuits

Categories Transistor IC Chip
Brand Name: original
Model Number: 2N7002
MOQ: discussible
Price: discussible
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pcs per month
Delivery Time: 1-7work days
Packaging Details: original
Place of Origin: China
Rated voltage: 60.0 V
Rated current: 115 mA
rated power: 200 mW
polarity: N-Channel
Installation method: Surface Mount
pin number: 3
package: SOT-23-3
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2N7002 Mosfet N Channel SMD 60V 115MA Integrated Circuits

Integrated Circuits 2N7002 Small Signal Field-Effect Transistors MOSFET N-CH 60V 115MA


Products Description:


2N7002 Transistor, MOSFET, N-Channel, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.

High density cell design for extremely low RDS (ON).

High saturation current capability.

Voltage controlled small signal switch.

Rugged and reliable

These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,DMOS technology. These products have been designed tominimize on-state resistance while provide rugged, reliable,and fast switching performance. They can be used in mostapplications requiring up to 400mA DC and can deliverpulsed currents up to 2A. These products are particularlysuited for low voltage, low current applications such as smallservo motor control, power MOSFET gate drivers, and otherswitching applications.

Technological Parameters:

Rated voltage (DC)60.0 V
Rated current115 mA
Rated power200 mW
pin number3
Drain-source resistance1.2 Ω
PolarN-Channel
Dissipated power200 mW
Threshold voltage2.1 V
Drain-source voltage (Vds)60 V
Gate-source breakdown voltage±20.0 V

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