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GS-UVV-3535LCW InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement

Categories UV Photodiode Sensor
Brand Name: Uv
Model Number: GS-UVV-3535LCW
Place of Origin: CHINA
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2000pcs/Month
Delivery Time: 3-5work days
Packaging Details: braid
Price: Negotiable
Chip size: 1 mm2
Package: SMD 3535
Features: High transparent quartz window, high sensitivity, low dark current
Response wavelength: 290-440 nm
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GS-UVV-3535LCW InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement

Product Description:

GS-UVV-3535LCW InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement


Features:

General Features:

l Indium Gallium Nitride Based Material

l Photovoltaic mode operation

l SMD 3535 ceramic package with quartz window

l High responsivity and low dark current

Applications: UV LED Monitoring, UV radiation dose measurement, UV Curing

Parameters Symbol Value Unit Maximum ratings

Operation temperature range Topt -25-85 oC

Storage temperature range Tsto -40-85 oC

Soldering temperature (3 s) Tsol 260 oC

Reverse voltage Vr-max -10 V

General characteristics (25 oC) Chip size A 1 mm2 Dark current (Vr = -1 V) Id <1 nA Temperature coefficient Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 60 pF> <1 nA Temperature coefficient Tc 0.065 %/ oC Capacitance (at 0 V and 1 MHz) Cp 1.7 pF>

<1 nA Temperature coefficient (@265 nm) Tc 0.05 %/ oC Capacitance (at 0 V and 1 MHz) Cp 18 p>


Specifications:

Wavelength of peak responsivisityλ p 390 nm
Peak responsivisity (at 385 nm)Rmax 0.289 A/W
Spectral response range (R=0.1×Rmax)290-440 nm
UV-visible rejection ratio (Rmax/R450 nm)- >10 -

Quality GS-UVV-3535LCW InGaN-Based UV Photodiode Sensor Detector Curing Radiation Measurement for sale
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