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S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry

Categories Infrared Photoelectric Sensor
Brand Name: Hamamatsu
Model Number: S1336-5BQ
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2000pcs/Month
Delivery Time: 3-5work days
Packaging Details: Tube
Price: Negotiable
photographic area is: 2.4 × 2.4 mm
Refrigeration and: Non - cooled
Encapsulated: Metal
encapsulation type is: TO-5
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S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry

Product Description:

S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry


Features:

Suitable for precise photometric determination from ultraviolet to near infrared

features

● High sensitivity in ultraviolet band

Low low capacitance

● High reliability

Rise time (typical value). 0.2 u s

Junction capacitance (typical value) 65 pF

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz


Specifications:

Reverse voltage (Max.)5V
spectral response range is190 to 1100 nm
Peak sensitivity wavelength (typical value)960 nm
Sensitivity (typical value)0.5 A/W
Dark current (maximum)30 pA

Quality S1336-5BQ Silicon Photodiode UV To NIR For Precision Photometry for sale
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