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| Categories | Piezoelectric Effect Crystals |
|---|---|
| Brand Name: | Crystro |
| Model Number: | CR220304-02 |
| Certification: | SGS/COC |
| Place of Origin: | China |
| MOQ: | 1pc |
| Price: | USD 20~200/pc |
| Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
| Supply Ability: | 20000pcs per month |
| Delivery Time: | 1-4 weeks |
| Packaging Details: | Transparent clean box |
| Item: | Orange Fe Doped LT (Lithium Tantalate) Wafer for High-Density Holographic Information Storage |
| Lattice constant: | a=5.154Å,c=13.783Å |
| Diameter: | 4inch,6inch |
| Thinckness: | 0.2mm,0.35mm,0.5mm |
| Refractive Indices: | no=2.176,ne=2.180(at 0.633 µm) no=2.131,ne=2.134(at 1.2 µm) |
| Orientation: | X-112°Y,36°Y,42°Y±0.5 |
| E-O Coefficient: | R33=30.4 |
| Curie Point: | 603±2℃ |
| Company Info. |
| ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
6inch Orange Fe Doped LT Lithium Tantalate Wafer High Density
Orange Fe Doped LT (Lithium Tantalate) Wafer for High-Density Holographic Information Storage
LiTaO3 Lithium Tantalate (LT) crystal is an important multifunctional crystal material with excellent piezoelectric, ferro-electric, acoustic-optical and electro-opticaleffects.Therefore, it has become a basic functional material in the field of acoustic surface wave (SAW) devices, optical communication, laser, and opto-electronics. Polished LT wafer is widely used in the manufacturing of resonators, filters,transducers and other electronic communication devices, especially for its good mechanical and electrical coupling,temperature coefficient and other comprehensive performance and is used in manufacturing high-frequency acoustic ,surface wave devices, and applied in many mobile phones, intercom, satellite communication, aerospace and other communication fields.
Basic Properties of LiTaO3:
| Crystal Structure | Trigonal |
| Lattice constant | a=5.154Å,c=13.783Å |
| Density | 7.45g/cm3 |
| Melting Point | 1650℃ |
| Curie Point | 603±2℃ |
| Mohs Hardness | 5.5-6 Mohs |
| Dielectric Constant | es11/eo:39~43, es33/eo:42~43；et11/eo:51~54, et33/eo:43~46 |
| Thermal Conductivity | 1015wm |
| Thermal Expansion Coefficient | a1=a2=1.61×10-6/℃, a3=4.1×10-6/℃ |
| Refractive Indices | n0=2.176 ne=2.180 @ 633mn |
| E-O Coefficient | R33=30.4 |
| Electro-mechanical coupling factor | R15≥0.3 |
| pyroelectric coefficient | 2.3×10-7 C/cm2/K |
| transmission range | 400-5000nm |
Typical Specifications:
| Size | Boule or wafer ,Acoustic or Optical grade |
| Doping | Fe, No Doping or With Fe |
| Boule Length | ≥50mm |
| Wafer Thickness | 0.25,0.35,0.50(mm) |
| Orientation | Y42°/Y36°/X/Y/Z or Upon Request |
| Surface Process | Single/Double Sides Polishing |
| TTV | < 10μm |
| BOW | BOW ± (25μm ~40um ) |
| Warp | ≤35μm |
| Flat Width | 32.0±2.0(mm) or Upon Request |
| Roughness | Ra≤10Å |
| Chamfe | ≤0.1mm@45° |
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