MRF9045LR1 Transistors RF Bipolar Transistors Si original in stock
The ASI MRF9045LR1 is a high voltage, gold-metalized,
laterally diffused metal oxide semiconductor. Ideal for today's
RF power amplifier Applications.
Product Category: RF MOSFET Transistors RoHS: Details Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 4.25 A Vds - Drain-Source Breakdown Voltage: 65 V Operating Frequency: 945 MHz Gain: 18.8 dB Output Power: 60 W Mounting Style: SMD/SMT Package / Case: NI-360 Packaging: Tray Configuration: Single Forward Transconductance - Min: 3 S Pd - Power Dissipation: 117 W Product Type: RF MOSFET Transistors Subcategory: MOSFETs Type: RF Power MOSFET Vgs - Gate-Source Voltage: 15 V Vgs th - Gate-Source Threshold Voltage: 4.8 V Unit Weight: 0.032480 oz
Typical Two •
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
MRF9045LR1 MRF9045LSR1
5
−
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
−
Channel Enhancement
−
Mode Lateral MOSFETs
Designed
for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high ga
in and broadband performance of these
devices make them ideal for large
−
signal, common
−
source amplifier applica-
tions in 28 volt base station equipment.
•
Typical Two
−
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
−
32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large
−
Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
No
IPG20N06S4L14AATMA1 Transistor IC Chip MOSFET 1 N Channel Throught Hole Package
