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| Categories | SMD LED Chip |
|---|---|
| Brand Name: | PHOENIX |
| Model Number: | CERAMIC3030 |
| Certification: | ANSI/ESDA/JEDEC JS-001 |
| Place of Origin: | SUZHOU |
| MOQ: | 5000PCS |
| Price: | Negotiation |
| Payment Terms: | Western Union, MoneyGram, T/T |
| Supply Ability: | 4000K PER MONTH |
| Delivery Time: | 7-10 DAYS |
| Packaging Details: | 4000PCS /ROLL |
| Name: | SMD LED CERAMIC3030 RED |
| λd: | 635-666nm |
| Power: | 1.5W |
| nput Voltage(V): | 2v |
| Luminous Flux(lm): | 50-70lm |
| Warranty(Year): | 2 years |
| Working Time (hours): | 20000 |
| Operating Temperature(℃): | -40-85 |
2V 700MA 1.5W CERAMIC3030 50-70LM 635-666NM SMD LED CHIP FOR PLANT LIGHTING
Characteristic
Maximum Ratings
Parameter Symbol Values
| Operating Temperature | Top | min. max. | -40 °C 125 °C |
| Storage Temperature | Tstg | min. max. | -40 °C 125 °C |
| Junction Temperature | T | max. | 135 °C |
| Forward current | I | min. max. | 100 mA 1400 mA |
Surge Current t ≤ 10 µs; D = 0.005 ; TJ = 25 °C | FS | max. | 1500 mA |
| Reverse voltage 2) | V | Not designed for reverse operation | |
ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) | ESD | 8 kV |
Characteristics
I = 700 mA; TJ = 25 °C
Parameter Symbol Values
| Peak Wavelength | λpeak typ. 660 nm |
Centroid Wavelength 3) I = 700 mA | λcentroid min. 646 nm typ. 657 nm max. 666 nm |
Dominant Wavelength 3) I = 700 mA | λdom typ. 640 nm |
| Spectral Bandwidth at rel,max | ∆λ typ. 20 nm |
| Viewing angle at 50% IV | 2φ typ. 140 ° |
Forward Voltage 4) I = 700 mA | 1.8V 2.00V 2.20V |
| Reverse current 2) | Not designed for reverse operation |
| Electrical thermal resistance junction/solderpoint with efficiency ηe = 74 % | RthJS elec. typ. 1.3 K / W |
Forward Voltage Groups
Group Forward Voltage 4)
I = 700 mA
| 1.80 V | 1.90 V |
| 1.90 V | 2.00 V |
| 2.00 V | 2.10 V |
| 2.10 V | 2.20 V |
Centroid
Group
Centroid Wavelength 3)
I = 700 mA
λcentroid
| 646NM | 666NM |
Dimensional Drawing
Further Information:
Approximate Weight: 28.0 mg
Package marking: Anode
Corrosion test:Class: 3BTest condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)
ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.
Reflow Soldering Profile
Product complies to MSL Level 2 acc. to JEDEC J-STD-020E
Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit
Minimum Recommendation Maximum
Ramp-up rate to preheat*) 2 25 °C to 150 °C | 3 | K/s |
tS 60 100 T to T | 120 | s |
Ramp-up rate to peak*) T to T 2 | 3 | K/s |
| Liquidus temperature TL 217 | °C | |
| Time above liquidus temperature tL 80 | 100 | s |
| Peak temperature T 245 | 260 | °C |
Time within 5 °C of the specified peak 10 20 temperature TP - 5 K | 30 | s |
Ramp-down rate* 3 T to 100 °C | 6 | K/s |
Time 25 °C to TP | 480 | s |
All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
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