Sign In | Join Free | My frbiz.com
frbiz.com
Products
Search by Category
Home > Electronic Signs >

IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A

Categories Discrete Semiconductors
Brand Name: Infineon Technologies/International Rectifier IOR
Model Number: IRFB7440PBF IRFB4310PBF IRFB4115PBF
Certification: ROHS
Place of Origin: CHINA
MOQ: 10pieces
Price: Negotiated
Payment Terms: T/T, Western Union
Supply Ability: 500000pcs
Delivery Time: 2-15days
Packaging Details: Standard package
Family: Discrete Semiconductor Products
Category: Electronic Components-MOSFET (Metal Oxide)
Series: HEXFET MOSFET (Metal Oxide)
Base part number: IRFB4
Details: N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB
Type: Transistors - FETs, MOSFETs - Single
Description: Transistors MOSFET N-CH TO220AB
Package: TO220
Mounting Type: Through hole
Stock: In Stock
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
  • Product Details
  • Company Profile

IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A

IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs


Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs

---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​


Description:
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:

Category
Discrete Semiconductor Products
 
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4340 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF1404


Environmental & Export Classifications
ATTRIBUTEDESCRIPTION
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095





Quality IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A for sale
Send your message to this supplier
 
*From:
*To: Angel Technology Electronics Co
*Subject:
*Message:
Characters Remaining: (0/3000)
 
Inquiry Cart 0