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| Categories | Cigarette Packing Machine Parts |
|---|---|
| Brand Name: | Upperbond |
| Model Number: | Maker |
| Certification: | CE, ISO |
| Place of Origin: | China |
| MOQ: | 2 pcs |
| Price: | Negotiable |
| Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
| Supply Ability: | 10000 pcs/month |
| Delivery Time: | 5-8 days |
| Packaging Details: | Carton |
| Material: | Treated stainless steel |
| Machine Models: | Protos, Passim, MK8, MK9, |
| Hardness: | Greatly Enhanced |
| Other Models: | Skoda, CME, Sasib |
| Port of Shipment: | Guangzhou, Shanghai |
| Cigarette Diameter: | 5.4mm - 8.0mm |
| Company Info. |
| HK UPPERBOND INDUSTRIAL LIMITED |
| Verified Supplier |
| View Contact Details |
| Product List |
Max Super Slim Silicon Transistor D2PAK Cigarette Packing Machine Parts
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
IRFZ44NS/LPbF
| Parameter | Min. | |
| V(BR)DSS | Drain-to-Source Breakdown Voltage | 55 |
| △V(BR)DSS 仏 Tj | Breakdown Voltage Temp. Coefficient | — |
| RDS(on) | Static Drain-to-Source On-Resistance | — |
| VGS(th) | Gate Threshold Voltage | 2.0 |
| gts | Forward Transconductance | 19 |
| bss | Drain-to-Source Leakage Current | — |
| — | ||
| loss | Gate-to-Source Forward Leakage | — |
| Gate-to-Source Reverse Leakage | — | |
| Qg | Total Gate Charge | — |
| Qgs | Gate-to-Source Charge | — |
| Qgd | Gate-to-Drain ("Miller") Charge | — |
| td(on) | Turn-On Delay Time | — |
| tr | Rise Time | — |
| td(off) | Turn-Off Delay Time | — |
| tf | Fall Time | — |
| Ls | Internal Source Inductance | — |
| Cjss | Input Capacitance | — |
| Coss | Output Capacitance | — |
| Crss | Reverse Transfer Capacitance | — |
| Eas | Single Pulse Avalanche Energy® | — |
Naming
The term transistor was coined by John R. Pierce as a contraction of the term transresistance. According to Lillian Hoddeson and Vicki Daitch, authors of a biography of John Bardeen, Shockley had proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor.
High-Frequency Transistor
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.
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