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Brand New MK8D Kretek Packing Units Switch Irfz44nl Transistor

Categories Passim Cigarette Machine Spare Parts
Brand Name: Upperbond
Model Number: Maker
Certification: CE, ISO
Place of Origin: China
MOQ: 2 pcs
Price: Negotiable
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 10000 pcs/month
Delivery Time: 5-8 days
Packaging Details: Carton
Hardness: Greatly Enhanced
Cutting Material: Filter Side
Port of Shipment: Guangzhou, Shanghai
Material: Treated stainless steel
Machine Models: Protos, Passim, MK8, MK9,
Cigarette Diameter: 5.4mm - 8.0mm
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Brand New MK8D Kretek Packing Units Switch Irfz44nl Transistor

Brand New MK8D Kretek Packing Units Switch Irfz44nl Transistor


A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.


Point-Contact Transistor


In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux Westinghouse, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947.


Material


Most transistors are made from very pure silicon, and some from germanium, but certain other semiconductor materials are sometimes used. A transistor may have only one kind of charge carrier, in a field-effect transistor, or may have two kinds of charge carriers in bipolar junction transistor devices.


Absolute Maximum Ratings


ParameterMax.Units
Id @ Tq = 25°CContinuous Drain Current, Vgs @ 10V49A
lD @ Tc = 100°CContinuous Drain Current, Vgs @ 10V35
IdmPulsed Drain Current ①160
PD @Ta = 25°CPower Dissipation3.8W
PD @TC = 25°CPower Dissipation94W
Linear Derating Factor0.63W/°C
VgsGate-to-Source Voltage±20V
IarAvalanche Current①25A
EarRepetitive Avalanche Energy®9.4mJ
dv/dtPeak Diode Recovery dv/dt ③5.0V/ns
TjOperating Junction and-55 to + 175°C


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