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AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet

Categories Power Mosfet Transistor
Brand Name: AOSMD
Model Number: AO4449
Certification: Original Factory Pack
Place of Origin: brand new
MOQ: 20pcs
Price: Negotiation
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 5200PCS
Delivery Time: 1 Day
Packaging Details: please contact me for details
VDS (V: -30V
ID: -7 A (VGS = -10V)
RDS(ON): < 54mΩ (VGS = -4.5V)
TLEAD: 260 0 C
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AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet



P-Channel Enhancement Mode Field Effect Transistor


Features

VDS (V) = -30V

ID = -7 A (VGS = -10V)

RDS(ON) < 34mΩ (VGS = -10V)

RDS(ON) < 54mΩ (VGS = -4.5V)


General Description

The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications).


TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

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Quality AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet for sale
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