1N5405 1N5407 1N5406 1n5408 Standard Rectifier Diode 3A 600V 800V 1000V

Silicon Standard Rectifier Diode 3A 600V 800V 1000V 1N5405 1N5406 1N5407 1N5408

Product Drawing

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

260 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.04 ounce, 1.10 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

	SYMBOLS	1N 5400	1N 5401	1N 5402	1N 5403	1N 5404	1N 5405	1N 5406	1N 5407	1N 5408	UNITS
Maximum repetitive peak reverse voltage	VRRM	50	100	200	300	400	500	600	800	1000	VOLTS
Maximum RMS voltage	VRMS	35	70	140	210	280	350	420	560	700	VOLTS
Maximum DC blocking voltage	VDC	50	100	200	300	400	500	600	800	1000	VOLTS
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃	I(AV)	3.0									Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)	IFSM	150									Amps
Maximum instantaneous forward voltage at 3.0A	VF	1.0									VOLTS
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=100℃	IR	5.0 100									µA
Typical junction capacitance (NOTE 1)	CJ	30.0									pF
Typical thermal resistance (NOTE 2)	RθJA	20.0									℃/W
Operating junction and storage temperature range	TJ,TSTG	-65 to +175									℃

Note:

1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

RATINGS AND CHARACTERISTIC CURVES

Changzhou Trustec Company Limited, established in 2011 and located in changzhou city which is one of the most economically developed triangle area, is a professional manufacturer and supplier of semiconductor discrete device industry.

The company is focusing on designing, manufacturing and sales of various diode, triode, bridge rectifier and other semiconductor discrete devices, and has become an outstanding partner for various branded manufacturers

Main products include standard silicon rectifier diode, fast recovery rectifier diode, high efficiency rectifier diode, ultra fast recovery rectifier diode, super fast recovery rectifier diode, small signal high speed switching diode, schottky barrier rectifier diode, zener diode, TVS, DIAC, various bridge rectifier etc, annual capacity is up to 10,000,000,000pcs diodes and widely used in home appliances, power supply and charger, green lighting, network and communication, automotive electronics, smart meters and instruments etc areas.

The company thinks highly of technological innovation and talent forging, investments in new product and new technique development every year, as well as internal management innovation and transformation.

The company owns high standard equipments from domestic and abroad, through automatic, intelligentized and large-scale lean manufacturing, continuously optimize technique process, expend product range and reduce product volume.

The company insists on professional spirit and core advantage, devoted to be the one of the leading enterprises in semiconductor discrete device industry, create value for customers, provide platform for employees and make contribution for society.

You choose TD brand diodes, you choose your reliable supplier of diodes.