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| Categories | Mosfet Power Transistor |
|---|---|
| Brand Name: | Hua Xuan Yang |
| Model Number: | AP2322GN |
| Certification: | RoHS、SGS |
| Place of Origin: | China |
| MOQ: | Negotiable |
| Price: | Negotiate |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 10,000/Month |
| Delivery Time: | 4~5 week |
| Packaging Details: | Carton Box |
| Model Number:: | AP2322GN |
| Brand Name:: | original |
| State:: | Original new |
| Type:: | LOGIC ICS |
| Lead time: | In stock |
| D/C:: | Newest |
This product is sensitive to electrostatic discharge, please handle with care.
This product is not authorized to be used as a critical component of a life support system or other similar systems.
APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.
APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | +8 | V |
| ID@TA=25℃ | Drain Current3, VGS @ 4.5V | 2.5 | A |
| ID@TA=70℃ | Drain Current3, VGS @ 4.5V | 2.0 | A |
| IDM | Pulsed Drain Current1 | 10 | A |
| PD@TA=25℃ | Total Power Dissipation | 0.833 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Data
| Symbol | Parameter | Value | Unit |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 150 | ℃/W |
AP2322G
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=1.6A | - | - | 90 | mΩ |
| VGS=2.5V, ID=1A | - | - | 120 | mΩ | ||
| VGS=1.8V, ID=0.3A | - | - | 150 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=1mA | 0.25 | - | 1 | V |
| gfs | Forward Transconductance | VDS=5V, ID=2A | - | 2 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=20V, VGS=0V | - | - | 1 | uA |
| IGSS | Gate-Source Leakage | VGS=+8V, VDS=0V | - | - | +100 | nA |
| Qg | Total Gate Charge | ID=2.2A VDS=16V VGS=4.5V | - | 7 | 11 | nC |
| Qgs | Gate-Source Charge | - | 0.7 | - | nC | |
| Qgd | Gate-Drain ("Miller") Charge | - | 2.5 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=10V ID=1A RG=3.3Ω VGS=5V | - | 6 | - | ns |
| tr | Rise Time | - | 12 | - | ns | |
| td(off) | Turn-off Delay Time | - | 16 | - | ns | |
| tf | Fall Time | - | 4 | - | ns | |
| Ciss | Input Capacitance | V.GS=0V VDS=20V f=1.0MHz | - | 350 | 560 | pF |
| Coss | Output Capacitance | - | 55 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 48 | - | pF | |
| Rg | Gate Resistance | f=1.0MHz | - | 3.2 | 4.8 | Ω |
Source-Drain Diode
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VSD | Forward On Voltage2 | IS=0.7A, VGS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time | IS=2A, VGS=0V, dI/dt=100A/µs | - | 20 | - | ns |
| Qrr | Reverse Recovery Charge | - | 13 | - | nC |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 360 ℃/W when mounted on Min. copper pad.
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