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3 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3"

Categories Silicon Wafer
Brand Name: PAM-XIAMEN
Place of Origin: China
MOQ: 1-10,000pcs
Price: By Case
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Delivery Time: 5-50 working days
product name: silicon Wafer
feature: Prime Grade
Dopant: Boron
Wafer Thickness: Power way
other name: Boron silicon Wafer
Wafer Diameter: 3 inch
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3 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3"

3 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3"


PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the Semiconductor Equipment and Materials International standards). We also work ultra thin wafer, silicon oxide wafer SiO2 thin film, silicon nitride wafer Si3N4 thin film, metallization on silicon substrate, and epi wafer service.


3inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3"

TypeConduction TypeOrientationDiameter(mm)Resistivity(Ω•cm)
High resistanceN&P<100>&<111>50 - 300>1000
NTDN<100>&<111>50 - 30030-800
CFZN&P<100>&<111>50 - 3001-50
GDN&P<100>&<111>50 - 3000.001-300

ParameterUnitValue
Crystalline structure-Monocrystalline
Growth technique-FZ
Crystal Orientation-111
Conductance type-P
Dopant-Boron
Diametermm76.2
ResistivityΩ/cm2>1000, 30-800, 1-50, 0.001-300
Thicknessum350±15um
230±15um
380±25um
TTVum≤10 um
BOWum≤40 um
Warpum≤40 um
(G)STIRumCustomer standard
Site Flatness-STIRumCustomer standard
Edge Exclusion ZonemmSEMI STD or Customer Request
LPD's-≥0.3μm, <30count or Customer Request
Oxygen Concentrationppma<1E16/cc
Carbon Concentrationppma<1E16/cc
RRG-≤15%
Front Surface-Polished
Back Surface-Polished or Etched
Edge Surface ConditionSEMI STD or Customer Request
Primary Flat LengthmmSEMI STD
Primary Flat Orientation(100/111) & Angle(°)SEMI STD
Secondary Flat LengthmmSEMI STD
Secondary Flat Orientation(100/111) & Angle(°)SEMI STD
Laser mark-SEMI STD or Customer Request
PackagingPackaged in a class 100 clean room environment,
Heat-sealed plastic inner/aluminium foil outer bags,
Vacuum Packing
If specific requirement by customer, will adjust accordingly

What is the application of silicon wafer?

Monocrystalline silicon wafer is mainly used to make semiconductor components, its detail application: it is the raw material of semiconductor silicon device, used for making high power rectifier, high power transistor, diode, switch device, etc. Monocrystalline silicon grown by Czochralski method is mainly used in semiconductor integrated circuit, diode, epitaxial wafer substrate and solar cell. Zone melting single crystal is mainly used in the field of high-voltage high-power controllable rectifier devices, widely used in high-power power transmission and transformation, electric locomotive, rectifier, frequency conversion, electromechanical integration, energy-saving lamp, television and other products. Epitaxial wafer are mainly used in the field of integrated circuits


Are You Looking for an Silicon Wafer?

PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

Quality 3 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3" for sale
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