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Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation

Categories Mosfet Power Transistor
Brand Name: Original brand
Model Number: IGOT60R070D1AUMA1
Certification: Original
Place of Origin: Original
MOQ: 800pcs
Price: Negotiation
Payment Terms: T/T
Supply Ability: 100000pcs
Delivery Time: 2-3days
Packaging Details: 800/Reel
Product: MOSFET 600V Cool GaN Power Transistor
Technology: GaN
Package: PG-DSO-20
Transistor Polarity: N-Channel
Installation: SMD/SMT
Pd-Power Dissipation: 125 W
Vds-Leakage source breakdown electric shock: 600 V
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Low Gate Charge Cool GaN Mosfet Power Transistor 125 W Pd - Power Dissipation

Mosfet Power Transistor IGOT60R070D1AUMA1 MOSFET 600V CoolGaN Power Transistor


Features

• Enhancement mode transistor – Normally OFF switch

• Ultra fast switching

• No reverse-recovery charge

• Capable of reverse conduction

• Low gate charge, low output charge

• Superior commutation ruggedness

• Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)


Benefits

• Improves system efficiency

• Improves power density

• Enables higher operating frequency

• System cost reduction savings

• Reduces EMI


Categories

MOSFET 600V CoolGaN Power Transistor

IGOT60R070D1AUMA1
Transistor PolarityN-Channel
Working Temperature Range-55C to +150C
Leakage Source on-resistance70 mOhms
PackagePG-DSO-20
Pd-Power Dissipation125 W
Vgs th-Gate Source threshold Voltage600 V
Continous Leakage Current31 A



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