Sign In | Join Free | My frbiz.com
frbiz.com
Products
Search by Category
Home > Industrial Controls >

3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

Categories Tip Power Transistors
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
MOQ: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Model Number: 3DD13001B
PC: 0.75W
VCEO: 420V
VCBO: 600V
Product name: semiconductor triode type
Tj: 150℃
Type: Triode Transistor
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
  • Product Details
  • Company Profile

3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)


FEATURE

Ÿ power switching applications


MARKING

13001=Device code

S 6B=Code



ORDERING INFORMATION

Part NumberPackagePacking MethodPack Quantity
3DD13001BTO-92Bulk1000pcs/Bag
3DD13001B-TATO-92Tape2000pcs/Box



MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)


SymbolParameterValueUnit
VCBOCollector -Base Voltage600V
VCEOCollector-Emitter Voltage420V
VEBOEmitter-Base Voltage7V
ICCollector Current -Continuous0.2A
PCCollector Power Dissipation0.75W
TJJunction Temperature150
TstgStorage Temperature-55 ~150


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC= 100μA , IE=0600V
Collector-emitter breakdown voltageV(BR)CEOIC= 1mA , IB=0400V
Emitter-base breakdown voltageV(BR)EBOIE= 100μA, IC=07V
Collector cut-off currentICBOVCB= 600V , IE=0100μA
Collector cut-off currentICEOVCE= 400V, IB=0200μA
Emitter cut-off currentIEBOVEB=7V, IC=0100μA

DC current gain

hFE(1)VCE= 20V, IC= 20mA1429
hFE(2)VCE= 10V, IC= 0.25 mA5
Collector-emitter saturation voltageVCE(sat)IC= 50mA, IB= 10 mA0.5V
Base-emitter saturation voltageVBE(sat)IC= 50 mA, IB= 10mA1.2V
Transition frequencyfT

VCE= 20V, IC=20mA

f = 1MHz

8MHz
Fall timetf

IC=50mA, IB1=-IB2=5mA, VCC=45V

0.3μs
Storage timetS1.5μs


CLASSIFICATION OF hFE(2)

Range14-1717-2020-2323-2626-29

TO-92 Package Outline Dimensions


SymbolDimensions In MillimetersDimensions In Inches
MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.4300.135
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
Φ1.6000.063
h0.0000.3800.0000.015



Quality 3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V for sale
Send your message to this supplier
 
*From:
*To: Shenzhen Hua Xuan Yang Electronics Co.,Ltd
*Subject:
*Message:
Characters Remaining: (0/3000)
 
Inquiry Cart 0